【Member News】Toward the Industrialization of Gallium Oxide: How Can Defect Challenges Be Overcome? — Fujia Gallium Co-Hosts the Symposium on Ga₂O₃ Single-Crystal Defect Research, Focusing on Key Technologies

      From April 11 to 12, 2026, the “Special Symposium on Defect Research in Gallium Oxide Single-Crystal Materials,” hosted by the Wide Bandgap Semiconductor Professional Committee of the Nonferrous Metals Society of China (hereinafter referred to as the Committee), and co-organized by Hangzhou Fujia Gallium Technology Co., Ltd. and Hangzhou Garen Semiconductor Co., Ltd., was successfully held in Hangzhou, Zhejiang.

      Attendees included more than 50 experts and scholars from universities, research institutes, and industry. Among them were Gao Huanzhi, Vice Chairman and Secretary-General of the Nonferrous Metals Society of China; Wu Ling, Honorary Member of the Committee and Chair of China Advanced Semiconductor Alliance (CASA); Shen Bo, Chairman of the Committee and Professor at Peking University; Shao Yuchuan, Deputy Director of the Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences; Li Fang, Deputy Secretary-General of the Nonferrous Metals Society of China; Chen Zhitao, Vice Chairman and Secretary-General of the Committee and Professor-level Senior Engineer at Guangdong Academy of Sciences; Qi Hongji, Researcher and Conference Chair of the symposium; Zhang Hui, Professor; as well as committee members Ye Jiandong, Tang Ning, Liu Wen, Liang Hongwei, Zheng Chenyan (CTO), Huang Sen (Researcher), Zhou Hong, Deputy Secretary-General Zhao Wei, and other representatives.

      The opening ceremony was chaired by Professor-level Senior Engineer Chen Zhitao. Qi Hongji, Researcher and Chairman of Hangzhou Fujia Gallium Technology Co., Ltd., introduced the background and organization of the symposium. In his remarks, Vice Chairman Gao Huanzhi highly recognized the positioning and achievements of the series of thematic symposia, emphasizing their significance in addressing key scientific challenges and promoting collaborative innovation among industry, academia, and research. Deputy Director Shao Yuchuan noted that defect issues in Gallium Oxide remain a key bottleneck restricting material quality improvement and device industrialization, and expressed hope that the symposium would help bridge the technical chain from materials to devices to applications. Professor Shen Bo highlighted the importance and necessity of developing high-quality wide bandgap semiconductor materials, expressing his expectation that the symposium would accelerate communication and cooperation across industry, academia, and research, thereby advancing China’s Gallium Oxide materials and device technologies.

      The symposium consisted of two main sessions: technical presentations and thematic discussions. The presentation session was held on the afternoon of April 11, chaired alternately by Researcher Qi Hongji and Professor Zhang Hui. Twelve experts and scholars delivered thematic reports covering defects in GaN, impurity defects in silicon, structural defects in SiC, defects in Gallium Oxide single crystals, defects in Gallium Oxide epitaxial films, advances in Gallium Oxide power devices, and related challenges. The speakers included Professor Ma Xiangyang (Zhejiang University), Professor Yang Xuelin (Peking University), Professor Hu Xiaobo (Shandong University), Professor Zhang Hui (Hangzhou Garen Semiconductor Co., Ltd.), Professor Mu Wenxiang (Shandong University), Researcher Sai Qinglin (Hangzhou Fujia Gallium Technology Co., Ltd.), Professor Wei Suhuai (Eastern Institute of Technology, Ningbo), Professor Zhang Hongliang (Xiamen University), Professor-level Senior Engineer Cheng Hongjuan (CETC 46), Professor Ye Jiandong (Nanjing University), Professor Zhou Hong (Xidian University), and Professor Xu Guangwei (University of Science and Technology of China). They systematically presented the latest progress in defect characterization, mechanism analysis, control techniques, and device applications.

      The discussion session was held on the morning of April 12, chaired by Professor Ye Jiandong (Nanjing University), Technical Director Zheng Chenyan (CR Micro), and Professor Shen Bo. Experts engaged in in-depth discussions on three core topics: p-type doping strategies and technological progress in Gallium Oxide epitaxy; defect classification in Gallium Oxide materials and their impact on device performance and reliability; and policy recommendations for national science and technology programs supporting Gallium Oxide research.

      In the closing session, Professor Shen Bo fully affirmed the outcomes of the symposium, emphasizing that defect research should be further integrated with application-driven goals to serve national strategic needs. Chairperson Wu Ling also highly commended the symposium and encouraged participants to strengthen confidence and ambition in strengthening strong suits and building competitive advantages in global technological competition.

Product Portfolio

Gallium Oxide Crystal Growth Equipment

      Fujia Gallium has developed the world’s first EFG crystal growth system featuring a proprietary “one-click crystal growth” function, supporting 2-inch to 6-inch crystal production. The system is protected by 6 granted domestic patents and 4 international patents. Complete equipment solutions and process packages are available.

      The company has also independently developed fully automated VB (Vertical Bridgman) crystal growth equipment. It was the first in China to overcome the technical bottleneck of 6-inch single-crystal growth using the VB method, enabling large-diameter bulk crystal production. This platform is supported by 6 granted domestic patents and 4 international patents, with customizable equipment and process solutions available.

Gallium Oxide Single-Crystal Substrates

      As one of China’s earliest pioneers in Gallium Oxide single-crystal research and an industry-leading supplier, Fujia Gallium provides high-quality single-crystal substrates to global customers.

      The product portfolio includes 26 standard substrate specifications ranging from 2-inch to 6-inch diameters. Customized solutions are available in terms of wafer size, electrical properties, and crystal orientation, supporting both advanced epitaxy R&D and volume production requirements.

Gallium Oxide Epitaxial Wafers

      Built upon mature MOCVD (Metal-Organic Chemical Vapor Deposition) and MBE (Molecular Beam Epitaxy) platforms, Fujia Gallium offers 15 standard epitaxial wafer products from 2-inch to 6-inch formats, as well as customized MBE-based epitaxial structures.

      The company provides integrated “substrate + epitaxy” solutions. A precise process control system enables customization of key parameters including epitaxial layer thickness, doping concentration, and compositional uniformity, meeting diverse requirements across different power levels and device architectures.

About Hangzhou Fujia Gallium

      Hangzhou Fujia Gallium Technology Co., Ltd., established on December 31, 2019, is committed to the vision of “enabling the world with better materials” and focuses on the industrialization of ultra-wide bandgap Gallium Oxide semiconductor materials. Its core products include Gallium Oxide single-crystal substrates, MOCVD/MBE epitaxial wafers, and crystal growth equipment based on the Vertical Bridgman (VB) and Edge-Defined Film-Fed Growth (EFG) methods. The company provides systematic solutions for material development, accelerating the integration of the entire ultra-wide bandgap Gallium Oxide industry chain and promoting the application of Gallium Oxide materials in power devices, microwave RF devices, and optoelectronic detection. A series of major achievements in Gallium Oxide development have been featured by leading media outlets including CCTV-1, CCTV-2, People’s Daily, Xinhua News Agency, China Securities Journal, and The Paper.

      In terms of corporate recognition, the company was designated as a Zhejiang Province Science and Technology SME in 2022, recognized as a National High-Tech Enterprise in 2023, and awarded the titles of Hangzhou High-Tech Enterprise R&D Center and Zhejiang “Specialized and Sophisticated” SME in 2024. In 2025, it obtained ISO 9001 Quality Management System certification (Certificate No. 20225Q20294R0M) and was also named a 2024 Hangzhou “New Eagle” Enterprise. In the Gallium Oxide field, the company is leading the drafting of the first national standard in this area and has undertaken one project from the National Development and Reform Commission and one from the Ministry of Industry and Information Technology, while participating in three additional national and provincial-level projects supported by the National Natural Science Foundation of China and regional authorities in Zhejiang and Shanghai. To date, the company has been granted 14 international patents (6 in the United States, 7 in Japan, and 1 in Europe), 42 domestic patents, three registered “Fujia Gallium” trademarks, and five software copyrights, including its proprietary “One-Click Crystal Growth” control software.