【Member News】Forum on RF and Power Devices Led by Academicians Including Hao Yue—Jointly Organized by the University of Electronic Science and Technology of China and Chengdu University of Information Technology

      From April 16 to 19, the 19th China Electronics and Information Annual Conference, hosted by the Chinese Institute of Electronics, was held in Wuhan. Nearly 1,000 participants attended the event, including academicians, industry representatives, and government officials from across the country.

      During the conference, University of Electronic Science and Technology of China and Chengdu University of Information Technology jointly organized a specialized forum on “RF and Power Devices and Integrated Circuits.” The forum was chaired by Hao Yue, Professor at Xidian University and academician of the Chinese Academy of Sciences, and Su Donglin, academician of the Chinese Academy of Engineering, Standing Council Member of the Chinese Institute of Electronics, and Professor at Beihang University. He Jianxin, President of the University of Electronic Science and Technology of China, attended the forum and delivered an opening address.

      Nearly 200 experts, scholars, industry representatives, and faculty and students from universities nationwide participated in the forum. Luo Xiaorong, Vice President of Chengdu University of Information Technology, and Yang Tao, Professor at UESTC, served as executive chairs and moderated the forum.

      At the opening ceremony, Hao Yue delivered an opening address on behalf of the organizing committee, welcoming all attending experts, industry representatives, and young scholars and students. He emphasized that RF and power devices, along with integrated circuits, form a critical foundation of the electronics and information industry, playing key roles in strategic emerging fields such as integrated circuits, rail transportation, and advanced energy. He also encouraged young researchers to take on responsibility and actively engage in tackling core technological challenges.

      In her address, Su Donglin emphasized that RF and power devices, alongside integrated circuits, are the critical pillars supporting the high-quality development of the electronic information industry.

      She called for strengthened collaborative innovation between universities, research institutes, and enterprises to promote the integration of interdisciplinary fields. Furthermore, she stressed the need to reinforce basic education and practical innovation capabilities to accelerate breakthroughs in core technologies and the pace of industrialization.

      In his speech, He Jianxin stated that the joint hosting of this special forum by the University of Electronic Science and Technology of China (UESTC) and Chengdu University of Information Technology aims to build a high-level platform for academic exchange.

      He proposed that the forum should be developed into a vital vehicle for the exchange of academic ideas to foster original achievements. He also emphasized strengthening the integration of industry and education to promote the transformation of scientific research into practical applications. Lastly, he stressed the importance of cultivating young talent to provide continuous momentum for the long-term development of the industry.

      The forum was presided over by Luo Xiaorong. During the session, she also delivered a keynote report titled "GaN/Si Hybrid Parallel Switches for High-Efficiency Power Electronics Applications," sharing the latest advancements in her research.

      During the forum, experts from prestigious institutions—including Peking University, Beihang University, UESTC, BUPT, Xidian University, and Fudan University—as well as leading enterprises in the microelectronics sector, delivered several presentations. These reports focused on RF and power devices, wide-bandgap (WBG) and ultra-wide-bandgap (UWBG) semiconductor materials and devices, and microwave/millimeter-wave integrated circuits and their industrial applications.

      In addition, a high-level roundtable summit titled "Broadening the Bandgap, Expanding the Future: Innovation and Development of WBG Semiconductor RF and Power Devices" was held. Participants engaged in in-depth discussions regarding technical roadmaps, application requirements, and the industrial ecosystem.