【Member News】Fujia Gallium Awarded “Quasi-Unicorn Enterprise” Title, Leading the Fourth-Generation Semiconductor Materials Track

      On April 23, 2026, the 10th All Things Growth Conference, jointly hosted by the Zhejiang Provincial Committee of the China National Democratic Construction Association, the Zhejiang Chamber of Commerce, and the China Investment Development Promotion Association, was successfully held in Hangzhou. During the event, the Hangzhou Venture Capital Association, in collaboration with WeLink and Bank of Hangzhou, officially released the 2026 Hangzhou Unicorn and Quasi-Unicorn Enterprise List. Leveraging its breakthrough innovations and industrialization achievements in fourth-generation semiconductor Gallium Oxide materials, Hangzhou Fujia Gallium Technology Co., Ltd. (“Fujia Gallium”) was successfully selected for the list and awarded the title of “Quasi-Unicorn Enterprise” in the new energy and new materials sector. In addition, the company was also recognized as a “Specialized, Refined, Distinctive, and Innovative” quasi-unicorn enterprise, highlighting its outstanding capabilities in specialized and high-quality development.

      Being included in the “Quasi-Unicorn Enterprise” list is not only a recognition of Fujia Gallium’s valuation and rapid growth, but also an affirmation of its contributions to upstream core materials in the wide-bandgap semiconductor field. As a company dedicated to building a fully integrated industrial chain for Gallium Oxide materials, Fujia Gallium has effectively addressed key industry challenges in the large-scale production of high-quality, large-size Gallium Oxide single crystals. It has mastered core technologies spanning equipment, substrates, and epitaxy, creating a distinctive “Fujia Speed” in the development of the Gallium Oxide industry. These advancements provide critical material support for next-generation high-performance power devices, RF devices, and optoelectronic detectors, further strengthening China’s industrial foundation in fourth-generation semiconductor materials.

      At the concurrently held Global Unicorn Innovation Exhibition, Fujia Gallium showcased its core products and latest technological achievements. At its booth, the company presented a series of products, including Gallium Oxide substrates and epitaxial wafers of various sizes, attracting significant attention from industry experts, investment institutions, and representatives across the supply chain. The exhibition fully demonstrated Fujia Gallium’s strong momentum in technological innovation and product iteration.

      Looking ahead, Fujia Gallium will take this recognition as a “Quasi-Unicorn Enterprise” as a new starting point, continuing to uphold its vision of “bringing high-quality materials to the world.” The company will further deepen its focus on ultra-wide bandgap semiconductor materials, increase R&D investment, and collaborate with partners across the industrial chain to accelerate the broader industrial application of Gallium Oxide materials in fields such as new energy, smart grids, 6G communications, aerospace, and controllable nuclear fusion.

Product Portfolio

Gallium Oxide Crystal Growth Equipment

      Fujia Gallium has developed the world’s first EFG crystal growth system featuring a proprietary “one-click crystal growth” function, supporting 2-inch to 6-inch crystal production. The system is protected by 6 granted domestic patents and 4 international patents. Complete equipment solutions and process packages are available.

      The company has also independently developed fully automated VB (Vertical Bridgman) crystal growth equipment. It was the first in China to overcome the technical bottleneck of 6-inch single-crystal growth using the VB method, enabling large-diameter bulk crystal production. This platform is supported by 6 granted domestic patents and 4 international patents, with customizable equipment and process solutions available.

Gallium Oxide Single-Crystal Substrates

      As one of China’s earliest pioneers in Gallium Oxide single-crystal research and an industry-leading supplier, Fujia Gallium provides high-quality single-crystal substrates to global customers.

      The product portfolio includes 26 standard substrate specifications ranging from 2-inch to 6-inch diameters. Customized solutions are available in terms of wafer size, electrical properties, and crystal orientation, supporting both advanced epitaxy R&D and volume production requirements.

Gallium Oxide Epitaxial Wafers

      Built upon mature MOCVD (Metal-Organic Chemical Vapor Deposition) and MBE (Molecular Beam Epitaxy) platforms, Fujia Gallium offers 15 standard epitaxial wafer products from 2-inch to 6-inch formats, as well as customized MBE-based epitaxial structures.

      The company provides integrated “substrate + epitaxy” solutions. A precise process control system enables customization of key parameters including epitaxial layer thickness, doping concentration, and compositional uniformity, meeting diverse requirements across different power levels and device architectures.

About Hangzhou Fujia Gallium

      Hangzhou Fujia Gallium Technology Co., Ltd., established on December 31, 2019, is committed to the vision of “enabling the world with better materials” and focuses on the industrialization of ultra-wide bandgap Gallium Oxide semiconductor materials. Its core products include Gallium Oxide single-crystal substrates, MOCVD/MBE epitaxial wafers, and crystal growth equipment based on the Vertical Bridgman (VB) and Edge-Defined Film-Fed Growth (EFG) methods. The company provides systematic solutions for material development, accelerating the integration of the entire ultra-wide bandgap Gallium Oxide industry chain and promoting the application of Gallium Oxide materials in power devices, microwave RF devices, and optoelectronic detection. A series of major achievements in Gallium Oxide development have been featured by leading media outlets including CCTV-1, CCTV-2, People’s Daily, Xinhua News Agency, China Securities Journal, and The Paper.

      In terms of corporate recognition, the company was designated as a Zhejiang Province Science and Technology SME in 2022, recognized as a National High-Tech Enterprise in 2023, and awarded the titles of Hangzhou High-Tech Enterprise R&D Center and Zhejiang “Specialized and Sophisticated” SME in 2024. In 2025, it obtained ISO 9001 Quality Management System certification (Certificate No. 20225Q20294R0M) and was also named a 2024 Hangzhou “New Eagle” Enterprise. In the Gallium Oxide field, the company is leading the drafting of the first national standard in this area and has undertaken one project from the National Development and Reform Commission and one from the Ministry of Industry and Information Technology, while participating in three additional national and provincial-level projects supported by the National Natural Science Foundation of China and regional authorities in Zhejiang and Shanghai. To date, the company has been granted 14 international patents (6 in the United States, 7 in Japan, and 1 in Europe), 42 domestic patents, three registered “Fujia Gallium” trademarks, and five software copyrights, including its proprietary “One-Click Crystal Growth” control software.