【Device Papers】High-Performance Schottky Diodes Based on 2-D β-Ga₂O₃ for Voltage Regulation

      Researchers from the Fudan University have published a dissertation titled "High-Performance Schottky Diodes Based on 2-D β-Ga₂O₃ for Voltage Regulation" in IEEE Transactions on Electron Devices.

Abstract

      A high-performance Schottky barrier diode (SBD) based on a 10-nm-thick 2-D β-gallium oxide (β-Ga₂O₃) flake is fabricated for compact power management integrated circuits (PMICs). The Pd/β-Ga₂O₃ SBD exhibits a high rectification ratio exceeding 10⁷, a low ideality factor of 1.48, and excellent stability over 1000cycles. This performance is attributed to a pristine, atomically sharp metal–semiconductor interface, enabled by the high thermal stability of β-Ga₂O₃ grown at 1000°C. Leveraging these properties, a voltage regulator circuit is demonstrated, providing stable and scalable output for both DC and AC signals. The device also showcases a remarkable breakdown field over 30 MV/cm owing to the forming of a semi-insulating layer (SIL), highlighting the potential of 2-D β-Ga₂O₃ for next-generation high-power electronics.

DOI：

https://doi.org/10.1109/TED.2026.3688218