【Device Papers】Performance improvement of NiO/β-Ga₂O₃ heterojunction diodes using ultrathin amorphous BN interfacial layer

      Researchers from the KAIST have published a dissertation titled "Performance improvement of NiO/β-Ga₂O₃ heterojunction diodes using ultrathin amorphous BN interfacial layer" in Applied Physics Letters.

Abstract

      In this work, a NiO/β-Ga₂O₃ heterojunction diode with an ultrathin (∼2 nm) amorphous boron nitride (a-BN) interfacial layer (IL) is presented. The NiO/a-BN/β-Ga₂O₃ heterojunction diode exhibited a lower turn-on voltage and a higher forward current, thereby reducing the power dissipation, compared to the NiO/β-Ga₂O₃ diode without an a-BN IL. It is also found that the a-BN IL reduces the interface states, leading to the improvement of the operational reliability after bias stress and reverse blocking characteristics.

DOI：

https://doi.org/10.1063/5.0321156