【Member News】GAREN SEMI Showcases at Hangzhou International Semiconductor and Integrated Circuit Industry Innovation Exhibition 2026, Wins Semiconductor Materials Technology Innovation Award

      Recently, the 2026 Hangzhou International Semiconductor and Integrated Circuit Industry Innovation Exhibition concluded successfully in Hangzhou. Hangzhou GAREN SEMI (“GAREN SEMI”) made a major appearance with the world’s first and only 8-inch gallium oxide substrate and 8-inch gallium oxide homoepitaxial wafer.

      In recognition of its innovative achievements in ultra-wide-bandgap gallium oxide semiconductor materials, the company was honored with the “Semiconductor Materials Technology Innovation Award” at this year’s exhibition. The award further highlights industry recognition of GAREN SEMI’s technological strength and marks another milestone for the development of China’s fourth-generation semiconductor industry.

Xia Ning, Supply Chain Director of Hangzhou GAREN SEMI (first from the right in the group photo), attended the forum and delivered a presentation.

GAREN SEMI Exhibition Booth

“Semiconductor Materials Technology Innovation Award” Plaque

World’s Only Technological Breakthrough Opens a New Era for Gallium Oxide

      In the field of large-size gallium oxide material development, Hangzhou GAREN SEMI has continued to lead the global industry through original technological breakthroughs, setting multiple industry milestones.

      In March 2025, the company successfully developed the world’s first 8-inch gallium oxide single crystal and fabricated an 8-inch gallium oxide substrate using its fully self-developed casting method, setting a new global record for gallium oxide crystal size. At present, GAREN SEMI has already begun commercial shipments of its 8-inch gallium oxide substrates, laying a solid foundation for future technological breakthroughs across the gallium oxide industry.

8-inch Gallium Oxide Substrate Developed by Hangzhou GAREN SEMI

      In March 2026, GAREN SEMI achieved another major breakthrough with the world’s first 8-inch gallium oxide homoepitaxial wafer. This achievement not only addresses one of the key bottlenecks hindering the industrialization of gallium oxide, but also reshapes the competitive landscape of the global gallium oxide industry, positioning the company at the forefront of industry development at the beginning of China’s “15th Five-Year Plan” period.

8-inch Gallium Oxide Homoepitaxial Wafer Developed by Hangzhou GAREN SEMI

      Notably, GAREN SEMI’s 8-inch gallium oxide substrate and 8-inch gallium oxide homoepitaxial wafer have both received authoritative certification from domestic and international laboratories. Their core performance indicators have reached globally leading levels, fully meeting the stringent requirements of ultra-high-voltage and high-power device applications.

      As the world’s only achievements of their kind, these breakthroughs have completely broken foreign technological monopolies and mark a critical leap for China in the field of ultra-wide-bandgap semiconductor materials — from “catching up” to “leading the way.”

Proprietary Equipment Provides Strong Support for Building a Full Industry Chain

      Independent control over core equipment is the foundation of industrial development. The self-developed “SCIENCE Series” VB (Vertical Bridgman) growth system for gallium oxide by Hangzhou GAREN SEMI serves as a key platform enabling the large-scale growth of large-size gallium oxide single crystals. Featuring fully independent intellectual property rights, the equipment supports the growth of gallium oxide single crystals with multiple crystal orientations and wafer sizes, while achieving internationally leading performance levels.

“SCIENCE Series” VB Crystal Growth System Developed by Hangzhou GAREN SEMI

     From core equipment development and single-crystal growth to substrate processing and homoepitaxy, GAREN SEMI has successfully established a complete end-to-end technology platform. The company has achieved 100% independent control over all key processes, providing a solid foundation for the industrialization and large-scale commercialization of gallium oxide materials.

Innovation Recognition Fuels Continued Progress and High-Quality Industry Development

      Receiving the “Semiconductor Materials Technology Innovation Award” represents strong industry recognition of the technological innovation capabilities of Hangzhou GAREN SEMI. It also reflects the company’s continued commitment to advancing the large-scale commercialization and industrial development of gallium oxide in alignment with China’s “15th Five-Year Plan” strategy for promoting the industrialization of gallium oxide technologies.

      Looking ahead, Hangzhou GAREN SEMI will remain committed to technological innovation, continue advancing core gallium oxide technologies and production line upgrades, and accelerate device validation and mass-production integration for 6-inch and 8-inch epitaxial wafers.

      The company will also further strengthen collaboration across the industry chain, empowering downstream industrial upgrades through cutting-edge technologies and contributing to the high-quality development of China’s semiconductor industry while helping build a global hub for the gallium oxide sector.

About GAREN SEMI

      Hangzhou Garen Semiconductor Co., Ltd. is a world-leading provider of Gallium Oxide materials and equipment solutions, focusing on R&D and industrialization in the ultra-wide bandgap semiconductor field. The company’s core products include 2–8-inch Gallium Oxide single crystals and substrates (with 8-inch being the world’s first), Gallium Oxide Vertical Bridgman (VB) crystal growth equipment, Gallium Oxide epitaxial wafers, etc. It is committed to building a full-chain product system of “equipment–crystal–substrate–epitaxy” to provide systematic solutions for global customers. The company’s achievements in Gallium Oxide have been specially reported by well-known media including People’s Daily, Xinhua News Agency, Science and Technology Daily, Sina Finance, China Blue News, and The Paper.

Enterprise Honors Summary

      Recognized as a National-level Science and Technology Small and Medium-sized Enterprise and Zhejiang Innovative Small and Medium-sized Enterprise in 2023;Awarded Zhejiang Specialized, Sophisticated, Unique and New Small and Medium-sized Enterprise in 2024;Approved as a High-tech Enterprise in 2025;Won the SEMI Outstanding Contribution Award for Sustainable Development at SEMICON CHINA 2025, the Together Progress Award at the Jufeng Summit Forum (JFSC) and Compound Semiconductor Industry Expo, the Innovation Vitality Award of Zhejiang Semiconductor Industry, the Second Prize in the Enterprise Group of the 10th “Maker China” Zhejiang Provincial Finals, the Top 500 Enterprise Group of the 10th “Maker China” SME Innovation and Entrepreneurship Competition, and the 2024–2025 Semiconductor Material Industry Contribution Award;The major breakthrough in the preparation of 8-inch Gallium Oxide single crystals and substrates was selected as one of the “Top 10 Advances in China’s Third-Generation Semiconductor Technology 2025” and “Major Scientific and Technological Achievements 2025” by the Department of Science and Technology of Zhejiang Province;Led the formulation of 2 group standard drafts, participated in drafting 1 national standard, and participated in promoting 1 group standard draft in the Gallium Oxide field;Supported by the “5213” Excellence Program of Xiaoshan District, Hangzhou, Zhejiang Province, and approved to establish Zhejiang Enterprise Research Institute;Obtained the quality management system certification;Granted 20 authorized invention patents at home and abroad (including patents in the US, Japan and other countries), with more than 50 patents pending.

For more information about Garen Semiconductor and its products, please visit our official website: http://garen.cc/

Or contact us via the following ways:

Mr. Jiang: 15918719807

E-mail: jiangjiwei@garen.cc

Mr. Xia: 19011278792

E-mail: xianing@garen.cc