【Device Papers】Electro-Thermal and Switching application of a Heteroepitaxial π-Gate β-Ga₂O₃ MOSFET on 4H-SiC

      Researchers from the Jamia Millia Islamia have published a dissertation titled "Electro-Thermal and Switching application of a Heteroepitaxial π-Gate β-Ga₂O₃ MOSFET on 4H-SiC" in Micro and Nanostructures.

Abstract

      A heteroepitaxial π-gate β-Ga₂O₃ MOSFET incorporating a variable lateral doping (VLD) drift region on a 4H–SiC substrate is investigated using calibrated physics-based Silvaco TCAD simulations. Four device configurations, including planar and π-gate structures on β-Ga₂O₃ and 4H–SiC substrates, are systematically evaluated under identical dielectric stacks, doping profiles, and transport models to ensure a fair comparison. The π-gate architecture enhances gate–channel electrostatic coupling, enabling stable enhancement-mode operation with a threshold voltage of ∼1.45 V, while the VLD profile effectively redistributes the electric field and suppresses drain-side field crowding. As a result, the proposed device achieves nearly twofold higher transconductance and significantly improved current modulation capability. Electro-thermal analysis reveals that the 4H–SiC substrate mitigates self-heating, reducing the peak lattice temperature by over 20% and shortening the thermal time constant to ∼0.20 μs. Mixed-mode simulations further demonstrate stable hard-switching operation with low voltage overshoot (<1.04 × V_DD) and reduced switching loss. An OFF-state breakdown voltage of 1665 V is achieved, highlighting the strong potential of combined π-gate electrostatic control, VLD engineering, and heteroepitaxial integration for high-voltage β-Ga₂O₃ power devices.

DOI：

https://doi.org/10.1016/j.micrna.2026.208710