【Member News】Signed Cooperation Agreement! Shenzhen Pinghu Laboratory and Xi’an University of Technology Join Forces to Advance Innovation in Wide Bandgap Semiconductors

      On May 22, 2026, Professor Yang Yuan, Director of the Office of International Cooperation and Exchange at Xi’an University of Technology, led a delegation of experts to Shenzhen Pinghu Laboratory for a research visit focused on wide bandgap semiconductor materials and device development. During the visit, the two parties formally signed a framework cooperation agreement. The signing ceremony was jointly completed by Director Yang Yuan on behalf of Xi’an University of Technology and Minister Zhao Lujiang on behalf of Shenzhen Pinghu Laboratory.

      The delegation toured the laboratory exhibition hall and pilot production line, gaining a detailed understanding of the laboratory’s research layout, technological development efforts, and achievements in technology transfer and commercialization. Both sides engaged in in-depth discussions on core technology R&D and the prospects for industrial applications.

      At the signing ceremony, the two parties adhered to the principles of “open cooperation, complementary advantages, mutual benefit, and shared development.” Guided by national strategic priorities and a new development philosophy, they focused on high-quality development and the cultivation of new quality productive forces, reaching comprehensive consensus on future collaboration. Moving forward, both sides will fully leverage the synergistic advantages of education, science and technology, talent, and industry. Targeting major national strategic needs and future industries, they will jointly tackle key technological challenges, undertake major national research tasks, promote the commercialization of scientific achievements, and cultivate urgently needed professional talent, thereby enhancing independent talent training capabilities and strengthening service to national strategies.

      This cooperation represents an important step in the integration of industry, academia, and research. With the signing of the agreement as a new starting point, both parties will further integrate resources and consolidate innovation capabilities, accelerating breakthroughs in wide bandgap semiconductor technologies and contributing to national strategic development and the cultivation of new quality productive forces.