【Device Papers】Impact of Oblique Heavy Ion Irradiation on the Transient Response of Ga₂O₃ MODFETs

      Researchers from Deen Dayal Upadhyaya College have published a dissertation titled " Impact of Oblique Heavy Ion Irradiation on the Transient Response of Ga₂O₃ MODFETs " in 2026 International Conference on Intelligent Processing, Hardware, Electronics, and Radio Systems (CIPHER).

Abstract

      This manuscript investigates the influence of Single Event Transients triggered by heavy ion irradiation on β-(AlGa)₂O₃/Ga₂O₃ MODFETs. A systematic reliability study of Ga₂O₃ MODFETs is carried out by deliberately probing vulnerable device region using particle strikes and by localizing the effects across the Gate – Drain access regions near the quantum well through angled ion strikes. Comparative analysis of the resulting drain current transients reveals an increased sensitivity to angled heavy ion strike towards the drain electrode, leading to a pronounced increase in peak transient current due to enhanced carrier collection at the drain electrode.

DOI：

https://doi.org/10.1109/CIPHER70417.2026.11523803