【Device Papers】Selective 10 nm Doping of Si, Se, S, and Sn in β-Ga₂O₃ Channel for Enhanced Linearity and Activation energy in nano-AlN/β-Ga₂O₃ MOSHEMT

      Researchers from The LNM Institute of Information Technology have published a dissertation titled " Selective 10 nm Doping of Si, Se, S, and Sn in β-Ga₂O₃ Channel for Enhanced Linearity and Activation energy in nano-AlN/β-Ga₂O₃ MOSHEMT " in Arabian Journal for Science and Engineering.

Abstract

      This paper presents a thorough investigation of AlN/β-Ga₂O₃， MOSHEMTs selectively doped with silicon (Si), sulfur (S), selenium (Se), or stannum (Sn) within a precise 10 nm region of the β-Ga₂O₃ channel. Leveraging the intrinsic ultra-wide bandgap of β-Ga₂O₃，doping is employed to significantly boost electron charge density and elevate device performance. Our comparative study establishes silicon as the superior dopant, delivering the highest electron current density（~6×10⁵ A/cm²）and exceptional electron mobility exceeding 110 cm²/Vs at the heterointerface. This outstanding performance is linked to Si’s low activation energy (2.5% at 2×10¹⁹ cm^-3) and efficient carrier generation, resulting in a robust and high-density two-dimensional electron gas (2DEG) of 10¹³ cm^-2. The Si-doped MOSHEMT demonstrates remarkable DC, RF, and linearity metrics, with detailed analyses of transconductance and its higher-order derivatives (g_m2, g_m3) revealing dramatically reduced distortion and expanded dynamic range. These results underscore the transformative potential of Si-doped AlN/β-Ga₂O₃ MOSHEMTs as high-linearity, high-efficiency devices ready to meet the stringent demands of next-generation RF and power electronics applications.

DOI：

https://doi.org/10.1007/s13369-026-11400-0