【Member News】Fujia Gallium Achieves Complete Ga₂O₃ Single Crystal Growth in First Run; VB Crystal Growth System Successfully Accepted by Customer

      Recently, Hangzhou Fujia Gallium Technology Co., Ltd. ("Fujia Gallium") announced that its self-developed Vertical Bridgman (VB) crystal growth system successfully produced a complete gallium oxide (Ga₂O₃) single crystal during the very first growth run at a customer site. The system subsequently passed customer acceptance and was officially delivered for operation, demonstrating the company's strong capabilities in the commercialization of Ga₂O₃ crystal growth equipment.

Ga₂O₃ single crystal grown during the first production run at the customer site

      Fujia Gallium was the first company in China to initiate research on VB growth technology for Ga₂O₃ single crystals in 2023. In September 2025, the company achieved China's first 6-inch VB-grown Ga₂O₃ single crystal. It then became the first organization worldwide to achieve 8-inch and 12-inch VB-grown Ga₂O₃ single crystals in December 2025 and March 2026, respectively, setting new global records for Ga₂O₃ crystal size.

      Guided by its dual-engine strategy of equipment development and material production, Fujia Gallium has leveraged extensive technical expertise and long-term process know-how to independently develop both VB crystal growth systems and EFG (Edge-Defined Film-Fed Growth) crystal growth systems specifically designed for ultra-wide-bandgap semiconductor materials such as gallium oxide. The successful delivery of the VB growth system further highlights the company's leadership in industrializing Ga₂O₃ crystal growth equipment.

VB crystal growth system for gallium oxide

EFG crystal growth system featuring one-click crystal growth capability

      Founded in late 2019, Fujia Gallium is one of China's earliest pioneers in the industrialization of gallium oxide materials and has grown into a leading supplier of both Ga₂O₃ materials and manufacturing equipment. In the equipment sector, the company has been granted 38 patents, including 9 international patents.

      Fujia Gallium was recognized as a 2026 Hangzhou Quasi-Unicorn Enterprise and has established China's first production line capable of manufacturing more than 10,000 high-quality Ga₂O₃ substrates annually. The company is also leading the development of the first national standard for gallium oxide in China. Its achievements in both equipment and materials have been featured by major media outlets including China Media Group (CCTV), People's Daily, and Xinhua News Agency.

      Looking ahead, Fujia Gallium will continue to uphold its mission of "Bringing Better Materials to the World", deepen collaboration with universities, research institutes, and industry partners, and contribute high-quality materials and equipment to support the sustainable development of the fourth-generation semiconductor industry.

For further information regarding our products and technologies, please contact:

Mr. Ying

Tel: +86 135 0675 3213

Product Portfolio

Gallium Oxide Crystal Growth Equipment

      Fujia Gallium has developed the world’s first EFG crystal growth system featuring a proprietary “one-click crystal growth” function, supporting 2-inch to 8-inch crystal production. The system is protected by 6 granted domestic patents and 4 international patents. Complete equipment solutions and process packages are available. The company has also independently developed fully automated VB (Vertical Bridgman) crystal growth equipment and was the first in China to overcome the technical bottleneck of 12-inch Ga₂O₃ single-crystal growth using the VB method, enabling the production of large-diameter bulk crystals.

Gallium Oxide Single-Crystal Substrates

      As one of China’s earliest pioneers in Gallium Oxide single-crystal research and an industry-leading supplier, Fujia Gallium provides high-quality single-crystal substrates to global customers. The product portfolio includes 26 standard Ga₂O₃ substrate specifications covering diameters from 2 to 8 inches. Customized solutions are available in terms of wafer size, electrical properties, and crystal orientation, supporting both advanced epitaxy R&D and volume production requirements.

Gallium Oxide Epitaxial Wafers

      Built upon mature MOCVD (Metal-Organic Chemical Vapor Deposition) and MBE (Molecular Beam Epitaxy) platforms, Fujia Gallium offers 15 standard epitaxial wafer products from 2-inch to 6-inch formats, as well as customized MBE-based epitaxial structures. The company provides integrated “substrate + epitaxy” solutions. A precise process control system enables customization of key parameters including epitaxial layer thickness, doping concentration, and compositional uniformity, meeting diverse requirements across different power levels and device architectures.

About Hangzhou Fujia Gallium

      Hangzhou Fujia Gallium Technology Co., Ltd., established on December 31, 2019, is committed to its mission of “Bringing Better Materials to the World” and focuses on the industrialization of ultra-wide bandgap Gallium Oxide semiconductor materials. Its core products include Gallium Oxide single-crystal substrates, MOCVD/MBE epitaxial wafers, and crystal growth equipment based on the Vertical Bridgman (VB) and Edge-Defined Film-Fed Growth (EFG) methods. The company provides systematic solutions for material development, accelerating the integration of the entire ultra-wide bandgap Gallium Oxide industry chain and promoting the application of Gallium Oxide materials in power devices, microwave RF devices, and optoelectronic detection. A series of major achievements in Gallium Oxide development have been featured by leading media outlets including CCTV, People’s Daily, Xinhua News Agency, China Securities Journal, and The Paper. In terms of corporate recognition, the company was designated as a Zhejiang Province Science and Technology SME in 2022, recognized as a National High-Tech Enterprise in 2023, and awarded the titles of Hangzhou High-Tech Enterprise R&D Center and Zhejiang “Specialized and Sophisticated” SME in 2024. In 2025, it obtained ISO 9001 Quality Management System certification (Certificate No. 20225Q20294R0M) and was also named a 2024 Hangzhou “Rising Eagle” Enterprise. In the Gallium Oxide field, the company is leading the drafting of the first national standard in this area and has undertaken one project from the National Development and Reform Commission and one from the Ministry of Industry and Information Technology, while participating in three additional national and provincial-level projects supported by the National Natural Science Foundation of China and regional authorities in Zhejiang and Shanghai. To date, the company has been granted 14 international patents (6 in the United States, 7 in Japan, and 1 in Europe), 42 domestic patents, three registered “Fujia Gallium” trademarks, and five software copyrights, including its proprietary “One-Click Crystal Growth” control software.