【World Express】FLOSFIA Says that Mass Production of Ga₂O₃ Power Devices will be Realized in 2022

    FLOSFIA, a company started by Kyoto University, which focuses on the development of gallium oxide (Ga₂O₃) power devices, is expected to start mass production of Schottky barrier diodes (SBDs) by the end of  2022.

    The company exhibited  [TECHNO-RONTIER 2022] (July 20-22, 2022/Big Sight, Tokyo), displaying the [Ga₂O₃ SBD] test board with gallium oxide. The maximum rated value of Ga₂O₃ SBD is 600V, and the forward current (I F) is 10A. Mr. Takuto Igawa , the business director of FLOSFIA's power device department, said, "In the past year, we have been producing samples of Ga₂O₃ SBD and have received positive comments".

Left=FLOSFIA's Ga₂O₃ SBD test board (photo left) and the DC-DC converter (photo right) with Ga₂O₃ SBD made by WAKOHDENKEN Co.,Ltd./right= DC-DC converter by WAKOHDENKEN Co.,Ltd.. You can see the installation of Ga₂O₃ SBD

    In addition to FLOSFIA's test board, DC-DC converter with Ga₂O₃ SBD manufactured by WAKOHDENKEN Co.,Ltd. was also displayed. This is of great significance. Mr. Igawa said: "Unless there is some adoption performance in the market, it is difficult to expand the popularity of new devices such as Ga₂O₃ SBD." Therefore, if any company adopts or introduces this product, it may increase the number of adoption cases by this opportunity. Mr. Igawa expressed his will: "I hope to show the final product with Ga₂O₃ SBD at the exhibition one year later." 

    FLOSFIA's gallium oxide power device uses a material named α- Ga₂O₃. Gallium oxide also has a different crystal form, namely β- Ga₂O₃, whose structure is more stable. However,  the α-Ga₂O₃ is more excellent in other properties such as band gap *, so FLOSFIA will focus on the development of α- Ga₂O₃. FLOSFIA has its own film forming technology - MIST-DRY method, which can produce stable and excellent performance α- Ga₂O₃。 Mr. Igawa said: "At present, it is difficult to produce stable products except through our MIST-DRY method α Gallium oxide. "

    Mr.Igawa said: "Although Ga₂O₃ power devices are still in the early stage of the power device market, many research results have been published on academic seminars, and most of them are aimed at β- Ga₂O₃ research. " "In this sense, as a power device the α  model is the closest to practical application. " Mr. Igawa added.