【Device Papers】Ultra-High-Rectification Self-Rectifying Volatile Memristor for Artificial Nociceptor Applications

      Researchers from Zhejiang University have published a dissertation titled " Ultra-High-Rectification Self-Rectifying Volatile Memristor for Artificial Nociceptor Applications " in 2026 年第 10 届 IEEE 电子器件技术与制造大会（EDTM）.

Abstract

      Self-rectifying volatile memristors (SRVMs) offer a promising pathway toward selector-free neuromorphic computing by integrating switching and rectification within a single two-terminal device. Here, we demonstrate a high-performance SRVM based on a Pt/Ga₂O₃/IGZO/Ti heterostructure. The device exhibits an ultra-high rectification ratio of 7.9 × 10⁷, an ON/OFF ratio of 21, and a SET voltage of 2 V, enabling intrinsic suppression of sneak-path currents in passive crossbar arrays. Benefiting from oxygen-ion migration and spontaneous relaxation in IGZO, the device shows volatile switching without a RESET bias, enabling dynamic, short-lived conductance modulation analogous to biological synapses. Leveraging its intrinsic volatility, the device emulates key nociceptive sensory behaviors—including threshold response, no-adaptation, sensitization, and relaxation—demonstrating its ability to operate simultaneously as a sensory neuron. This work showcases a compact neuromorphic primitive where computation and perception co-exist at the device level, providing a scalable hardware foundation for future in-sensor computing and low-power neuromorphic processors.

DOI：

https://doi.org/10.1109/EDTM65772.2026.11496756