【Member News】Fujia Gallium Wins “Top 10 Outstanding Paper” Award for Ga₂O₃ Crystal Growth Technology, Driving Continued Industry Advancement

      Gallium oxide (Ga₂O₃), an ultra-wide-bandgap semiconductor, has broad application prospects in high-voltage power electronics and solar-blind ultraviolet photodetection. However, the ability to grow large-size, high-quality, and low-cost single crystals remains the primary bottleneck to its commercialization. Among the available crystal growth technologies, the Vertical Bridgman (VB) method is regarded as one of the most promising routes for large-scale Ga₂O₃ production due to its relatively low equipment investment, stable growth process, and strong scalability for mass manufacturing. Fujia Gallium became one of the first companies in China to strategically invest in VB-grown Ga₂O₃ single crystals in 2023. Guided by its dual-engine strategy of equipment innovation and process optimization, the company achieved major technological breakthroughs within a short period by leveraging high-precision thermal field simulation. Notably, Novel Crystal Technology (NCT) of Japan, a leading Ga₂O₃ company, has also identified the VB method as a core technology for future large-diameter Ga₂O₃ crystal production after years of development, further highlighting the significant potential of the VB method for the industrial-scale manufacturing of Ga₂O₃ single crystals.

      Following the publication of this paper, Fujia Gallium has accelerated its commercialization efforts. In September 2025, the company achieved the first domestic demonstration of 6-inch β-Ga₂O₃ single-crystal growth using the VB method. In December of the same year, it successfully produced the world’s first 8-inch VB-grown Ga₂O₃ crystal. In March 2026, Fujia Gallium further achieved another milestone by growing the world’s first 12-inch VB-grown Ga₂O₃ crystal. Behind each increase in crystal size lies a substantial improvement in growth processes and equipment capabilities, representing a solid step toward large-scale industrialization.

      Through continuous optimization of growth technologies, Fujia Gallium has established independent intellectual property barriers covering both process technologies and equipment systems. In the field of VB crystal growth processes, the company has filed six invention patents, while in VB growth equipment development, it has obtained four internationally granted patents. In addition, in 2025, Fujia Gallium led the drafting of China’s first national standard in the field of gallium oxide single crystals, “Gallium Oxide Single-Crystal Polished Wafers” (Project No. 20254547-T-469), further contributing to the standardization and industrial development of the Ga₂O₃ semiconductor industry.

      As the first domestic Ga₂O₃ materials supplier to strategically adopt the VB technology route, Fujia Gallium has established a clear market positioning: addressing the practical needs of downstream customers in power electronics and optoelectronic detection, while providing high-quality Ga₂O₃ substrates and related products. Currently, the company has developed a comprehensive product portfolio covering 2-inch to 8-inch Ga₂O₃ substrates and epitaxial wafers, including EFG/VB-grown substrates, MOCVD/MBE epitaxial wafers, and fully automated crystal growth equipment. Its products and solutions have been delivered to more than 60 universities, research institutes, and industrial customers worldwide.

      Recognition represents affirmation of past achievements, while products represent commitments to future development. Moving forward, Fujia Gallium will continue to pursue technological innovation and remain customer-focused, upholding its mission of “Enabling the world with better materials” to provide a solid material foundation for the development of fourth-generation semiconductor technologies.

Product Portfolio

Gallium Oxide Crystal Growth Equipment

      Fujia Gallium has developed the world’s first EFG crystal growth system featuring a proprietary “one-click crystal growth” function, supporting 2-inch to 8-inch crystal production. The system is protected by 6 granted domestic patents and 4 international patents. Complete equipment solutions and process packages are available. The company has also independently developed fully automated VB (Vertical Bridgman) crystal growth equipment and was the first in China to overcome the technical bottleneck of 12-inch Ga₂O₃ single-crystal growth using the VB method, enabling the production of large-diameter bulk crystals. Currently, this equipment has been granted 6 domestic patents and 4 international patents, and VB systems along with process packages can be provided based on customer requirements.

Gallium Oxide Single-Crystal Substrates

      As one of China’s earliest pioneers in Gallium Oxide single-crystal research and an industry-leading supplier, Fujia Gallium provides high-quality single-crystal substrates to global customers. The product portfolio includes 26 standard Ga₂O₃ substrate specifications covering diameters from 2 to 8 inches. Customized solutions are available in terms of wafer size, electrical properties, and crystal orientation, supporting both advanced epitaxy R&D and volume production requirements.

Gallium Oxide Epitaxial Wafers

      Built upon mature MOCVD (Metal-Organic Chemical Vapor Deposition) and MBE (Molecular Beam Epitaxy) platforms, Fujia Gallium offers 15 standard epitaxial wafer products from 2-inch to 6-inch formats, as well as customized MBE-based epitaxial structures. The company provides integrated “substrate + epitaxy” solutions. A precise process control system enables customization of key parameters including epitaxial layer thickness, doping concentration, and compositional uniformity, meeting diverse requirements across different power levels and device architectures.