【Device Papers】High Voltage Vertical Ga₂O₃ JBS Diode with Fluorine Ion Implanted Edge Termination

      Researchers from Xidian University have published a dissertation titled " High Voltage Vertical Ga₂O₃ JBS Diode with Fluorine Ion Implanted Edge Termination " in Journal of Physics D: Applied Physics.

Abstract

      This work reports the electrical properties of Ga₂O₃ quasi JBS diodes fabricated via F (Fluorine) -ion implantation. The JBS diodes incorporating edge termination (ET) and field-limiting rings (FLRs) demonstrate a reverse leakage current reduced by nearly three orders of magnitude compared to Schottky barrier diodes (SBDs), the breakdown voltages of JBS diodes with FLRs exceeds 2000 V. The leakage current increases and the breakdown voltage decreases respectively as the proportion of F implantation decreases. Correspondingly, the reverse breakdown mechanism gradually transitions from soft breakdown to hard breakdown. Temperature-dependent measurements reveal that the barrier formed by F implantation gradually vanishes with increasing temperature, leading to the disappearance of the double barrier effect during forward conduction and significant increases in reverse leakage current and decreases in breakdown voltage, indicating altered leakage mechanisms.

DOI：

https://doi.org/10.1088/1361-6463/ae8032