Patents
【Patenes】Gallium Oxide Patent Weekly Report (Issue 4, July): Focusing on Crystal Growth, Epitaxy Technologies, Device Development, and Application Expansion
日期：2026-07-31阅读：141
Introduction
To further strengthen information exchange within the gallium oxide industry and help stakeholders stay informed of the latest technological developments, the Asian Gallium Oxide Alliance (AGOA) has launched the Gallium Oxide Patent Weekly column. This series will continuously compile and publish newly disclosed patent applications and technological advances in the gallium oxide field.
As an important indicator of technological innovation, patents reflect R&D trends and strategic layout across the industrial chain. This column focuses on crystal growth, material preparation, defect engineering, device development, process optimization, and emerging applications, providing enterprises, universities, and research institutes with insights into technology trends while supporting the continued development of the gallium oxide industry.
This fourth issue reviews gallium oxide-related patent applications published during the fourth week of July 2026 (July 20 – July 26).
1.An Oxygen Sensor Based on Ga₂O₃Microribbon Materials, Preparation Method, and Detection Method (Published on July 21)
According to information from the China National Intellectual Property Administration (CNIPA), Dalian Maritime University has filed a patent application titled “An Oxygen Sensor Based on Ga₂O₃ Microribbon Materials, Preparation Method, and Detection Method”, with publication number CN122430411A and application number 2026107650817.
The patent discloses an oxygen sensor based on Ga₂O₃ microribbon materials, along with its preparation and detection methods. The method employs chemical vapor deposition (CVD) to synthesize Ga₂O₃ microribbons, followed by uniform coating of a porous ZIF-8 material onto their surfaces to fabricate the sensor electrodes. Under ultraviolet (UV) excitation, the sensor enables highly sensitive and fast-response oxygen detection at room temperature.
Compared with thin-film semiconductor sensors, the Ga₂O₃ microribbon structure used in this invention provides abundant surface active sites, facilitating the ionization of more adsorbed oxygen species and improving sensor sensitivity. The additional coating of porous ZIF-8 with a larger specific surface area further enhances oxygen enrichment and migration on the Ga₂O₃ surface. Under UV irradiation, electron transfer between adsorbed oxygen species and Ga₂O₃ microribbons is promoted, leading to further improvements in sensing performance.
From Ga₂O₃ microribbon growth to electrode structure design, the proposed approach features a simple fabrication process, low cost, and strong potential for large-scale production.
2.Ga₂O₃/GaON Nanocomposite Heterostructure Materials, Preparation Method, and Their Application in Dual-Gas Sensing Detection (Published on July 21)
According to information from the China National Intellectual Property Administration (CNIPA), Jilin Normal University of Engineering and Technology has filed a patent application titled “Ga₂O₃/GaON Nanocomposite Heterostructure Materials, Preparation Method, and Dual-Gas Sensing Detection Applications”, with publication number CN122426767A and application number 2026107489469.
The patent discloses Ga₂O₃/GaON nanocomposite heterostructure materials, their preparation methods, and their application in dual-gas sensing detection. The preparation process includes: (1) preparation of the reaction solution; (2) synthesis of gallium oxide nanoparticle precursors; (3) fabrication of Ga₂O₃/GaON nano-heterostructures; and (4) application of the Ga₂O₃/GaON nanostructures for dual-gas detection.
The obtained nanocomposite heterostructures feature GaON (100) crystal planes epitaxially grown along the Ga₂O₃ (111) crystal planes, with the two phases intersecting at an angle of approximately 127° and a nanostructure size of 20–40 nm. The resulting dual-gas sensor enables trimethylamine detection at 145–175°C and aniline detection under 420–470 nm light irradiation at 15–40°C. It achieves ppb-level detection of both trimethylamine and aniline gases, meeting the requirements for sensitive dual-gas detection in specific application fields.
The proposed preparation method is compatible with large-scale production requirements.
3.A Method for Growing Gallium Oxide Single Crystals Using the Flux Growth Method (Published on July 21)
According to information from the China National Intellectual Property Administration (CNIPA), Hangzhou Garen Semiconductor Co., Ltd. has filed a patent application titled “A Method for Growing Gallium Oxide Single Crystals Using the Flux Growth Method”, with publication number CN122428364A and application number 2025100885959.
The invention relates to the field of crystal material growth technology, particularly a method for growing gallium oxide single crystals using a flux growth approach. The method includes the following steps: mixing gallium oxide with a flux, heating the mixture to melt, followed by homogenization and degassing processes to obtain a melt; then growing crystals from the melt to obtain gallium oxide single crystals. The flux materials include calcium oxide, bismuth oxide, alkali metal oxides, or barium oxide, wherein the alkali metal oxides include sodium oxide and/or potassium oxide.
The flux materials used in this invention feature low cost and low addition amounts. Moreover, since the selected fluxes are not semiconductor materials, they are less likely to introduce impurities into the gallium oxide single crystals, thereby ensuring high crystal quality. In addition, the flux materials exhibit good stability under high-temperature conditions and are resistant to decomposition, which facilitates stable growth of high-quality gallium oxide single crystals.
4.A Method for Growing Gallium Oxide Single Crystals Using the Flux-Assisted Zone Melting Method (Published on July 21)
According to information from the China National Intellectual Property Administration (CNIPA), Hangzhou Garen Semiconductor Co., Ltd. has filed a patent application titled “A Method for Growing Gallium Oxide Single Crystals Using the Flux-Assisted Zone Melting Method”, with publication number CN122428365A and application number 2025100885910.
The invention belongs to the field of crystal material technology and particularly relates to a method for growing gallium oxide single crystals using a flux-assisted zone melting technique. The method performs single-crystal growth within a limited small molten zone. Compared with conventional zone melting methods, this approach effectively reduces the amount of flux required, avoids flux waste, and lowers production costs.
Meanwhile, the reduction of the heating region further decreases energy consumption, thereby improving cost efficiency. In addition, the use of flux effectively lowers the melting point of gallium oxide, enabling the replacement of expensive iridium crucibles with platinum crucibles and further reducing manufacturing costs.
Furthermore, during the crystal growth process, the proposed method only moves the molten region without cooling the molten zone, allowing the melt to remain at a constant operating temperature. This avoids limitations caused by the slope of the liquidus line in the phase diagram, improves growth efficiency, and enhances the capability for large-scale production of gallium oxide single crystals.
5.A Gallium Oxide Thin-Film Solar-Blind Ultraviolet Photodetector Modified with Metal Nanoparticles and Preparation Method Thereof (Published on July 24)
According to information from the China National Intellectual Property Administration (CNIPA), Liaoning Normal University has filed a patent application titled “A Gallium Oxide Thin-Film Solar-Blind Ultraviolet Photodetector Modified with Metal Nanoparticles and Preparation Method Thereof”, with publication number CN122458508A and application number 2026107221953.
The invention discloses a gallium oxide thin-film solar-blind ultraviolet (UV) photodetector modified with metal nanoparticles, along with its preparation method. The technology relates to the field of metal surface modification. In this invention, low-cost metal nanoparticles are used to replace traditional noble metal materials. By utilizing the localized surface plasmon resonance (LSPR) effect of inexpensive metal nanoparticles in the solar-blind UV region, together with the synergistic modulation of the interfacial barrier between the nanoparticles and the gallium oxide layer, a functional surface modification structure is constructed on the Ga₂O₃ photosensitive layer.
The proposed device achieves synergistic optimization of enhanced light absorption, efficient separation and transport of photogenerated carriers, and effective suppression of dark current. It exhibits excellent solar-blind UV selectivity, significantly improved photodetection sensitivity, optimized photo-to-dark current characteristics, and enhanced operational stability.
The overall fabrication process is simple, highly compatible, and cost-controllable, making it suitable for the industrial promotion and practical application of Ga₂O₃-based deep-ultraviolet solar-blind photodetectors.
6.A Method, Apparatus, and Medium for Adjusting Doping Uniformity During Gallium Oxide Growth (Published on July 24)
According to information from the China National Intellectual Property Administration (CNIPA), Shandong SINOGa Valley Semiconductor Co., Ltd. has filed a patent application titled “A Method, Apparatus, and Medium for Adjusting Doping Uniformity During Gallium Oxide Growth”, with publication number CN122446329A and application number 202610583420X.
The patent discloses a method, apparatus, and medium for regulating doping uniformity during gallium oxide growth, relating to the field of semiconductor single-crystal material fabrication technology.
The method includes the following steps: after the gallium oxide single crystal enters the constant-diameter growth stage, real-time resistivity signals from multiple positions of the crystal are collected, while corresponding real-time process parameters are simultaneously acquired. The resistivity signals are then inversely analyzed to obtain the carrier concentration and doping concentration data at different crystal positions. The real-time process parameters are synchronized with the carrier concentration and doping concentration data through timestamp alignment to establish correlated datasets.
The correlated data are subsequently input into a pre-trained regulation model, which predicts trends in doping uniformity deviations and obtains predicted deviation values. When the predicted deviation exceeds a predefined allowable threshold, the system generates corresponding process parameter adjustment instructions based on the deviation analysis and executes the control commands.
This method enables real-time monitoring and intelligent regulation of doping uniformity during Ga₂O₃ single-crystal growth, improving crystal quality control and providing technical support for the stable preparation of high-quality gallium oxide substrates.
7.A Low-Temperature Gallium Oxide Epitaxial Growth Method Using a Composite Strain Buffer Layer (Published on July 24)
According to information from the China National Intellectual Property Administration (CNIPA), Beijing Orient Semi Co., Ltd. has filed a patent application titled “A Low-Temperature Gallium Oxide Epitaxial Growth Method Using a Composite Strain Buffer Layer”, with publication number CN122458702A and application number 2026105822170.
The invention discloses a low-temperature gallium oxide epitaxial growth method based on a composite strain buffer layer, belonging to the field of semiconductor technology.
The proposed method includes the following steps: substrate pretreatment; growth of a graded AlₓGa₁₋ₓN dislocation filtering layer in chamber A; in-situ transfer to chamber B under inert gas purging and positive-pressure protection; deposition of a low-temperature amorphous Ga₂O₃ buffer layer in chamber B; growth of the main β-Ga₂O₃ epitaxial layer through a two-step process consisting of a low-temperature, low-growth-rate nucleation stage followed by a higher-temperature main growth stage; and subsequent annealing treatment.
By implementing dual-chamber in-situ atmosphere isolation, the invention eliminates cross-contamination between NH₃ and O₂ during the growth process. The composite strain buffer system, consisting of the graded AlGaN layer and amorphous buffer layer, effectively filters threading dislocations. Meanwhile, the low-temperature two-step growth strategy suppresses thermal stress and improves surface morphology.
The method enables controlled growth of high-quality β-Ga₂O₃ epitaxial films at reduced temperatures, providing a promising approach for improving epitaxial quality and advancing the scalable fabrication of Ga₂O₃-based semiconductor devices.
8.A Gallium Oxide Solar-Blind Photodetector with a Mesh-Transparent Composite Electrode Structure and Its Fabrication Method (Published on July 24)
According to information from the China National Intellectual Property Administration (CNIPA), Xiamen University has filed a patent application titled “A Gallium Oxide Solar-Blind Photodetector with a Mesh-Transparent Composite Electrode Structure and Its Fabrication Method”, with publication number CN122458545A and application number 2026105799668.
The invention belongs to the field of semiconductor optoelectronic detection technology and discloses a gallium oxide solar-blind photodetector featuring a mesh-transparent composite electrode structure.
The device consists of, from bottom to top, a back ohmic contact electrode, a gallium oxide semiconductor layer, and a front double-layer Schottky electrode. The lower layer of the front Schottky electrode is a transparent electrode, while the upper layer is a mesh electrode.
The proposed device adopts a Schottky-type structure, eliminating the need for challenging p-type Ga₂O₃ fabrication processes and avoiding the complex high-vacuum and high-temperature processes required for heterojunction structures. The fabrication processes for the electrodes and gallium oxide semiconductor layer are mature and controllable, significantly reducing the cost of large-scale production.
By optimizing the doping concentration, epitaxial growth method, and substrate type of gallium oxide materials, the device can be flexibly adapted to various solar-blind ultraviolet detection applications, including civilian fire monitoring, biochemical detection, military missile warning systems, and ultraviolet encrypted communication.
The invention features strong practicality and provides a low-cost, scalable approach for the industrial development of gallium oxide-based deep-ultraviolet solar-blind photodetectors.
9.An In-Situ Resistivity Mapping Monitoring Method and Apparatus for Gallium Oxide Single-Crystal Growth Process (Published on July 24)
According to information from the China National Intellectual Property Administration (CNIPA), Shandong SINOGa Valley Semiconductor Co., Ltd. has filed a patent application titled “An In-Situ Resistivity Mapping Monitoring Method and Apparatus for Gallium Oxide Single-Crystal Growth Process”, with publication number CN122446328A and application number 2026105770852.
The patent relates to the semiconductor technology field and discloses an in-situ resistivity mapping monitoring method and apparatus for the gallium oxide single-crystal growth process.
The method includes the following steps: within a guided-mode growth furnace, a two-dimensional sensor array is constructed at a selected axial section of the solidified crystal ingot above the solid–liquid interface. A high-frequency signal with a preset frequency is applied to excite the sensor array, while complex electromagnetic response signals from the moving crystal ingot are synchronously collected.
The collected complex electromagnetic response signals are then processed through a pre-established resistivity inversion model specifically developed for gallium oxide single crystals. Through calculation and interpretation, two-dimensional resistivity distribution data along both the axial and radial directions of the selected crystal section are obtained.
Based on the two-dimensional resistivity distribution data, the system generates real-time resistivity distribution maps that are dynamically updated throughout the crystal growth process. These resistivity maps are automatically correlated and compared with the simultaneously collected crystal growth process parameters, enabling traceability analysis of the process causes behind abnormal resistivity distribution regions.
This technology enables real-time, non-destructive monitoring of resistivity uniformity during Ga₂O₃ single-crystal growth, providing an intelligent process-control solution for improving substrate quality, doping uniformity, and the industrial-scale production of high-performance gallium oxide wafers.
10.A Quasi-Ohmic Contact Fabrication Method for Weak p-Type Gallium Oxide and a Solar-Blind Photodetector (Published on July 24)
According to information from the China National Intellectual Property Administration (CNIPA), Jimei University has filed a patent application titled “A Quasi-Ohmic Contact Fabrication Method for Weak p-Type Gallium Oxide and a Solar-Blind Photodetector”, with publication number CN122458529A and application number 2026105728287.
The patent discloses a quasi-ohmic contact fabrication method for weak p-type Ga₂O₃ and a corresponding solar-blind photodetector, belonging to the field of semiconductor device fabrication technology.
The proposed method does not rely on conventional metal work-function matching strategies. Instead, a patterned Zn metal layer is fabricated on the surface of the weak p-type Ga₂O₃ semiconductor layer, followed by a cyclic stepwise thermal annealing process in a protective atmosphere. Each temperature step is heated to a target temperature, maintained for a specific duration, and then cooled to room temperature, with the target temperatures gradually increasing according to the annealing sequence.
Through the cyclic stepwise annealing treatment, the method overcomes the kinetic instability of Zn metal, enabling controllable and stable interfacial doping. A graded p⁺ interface layer is formed in situ, which physically modifies the energy-band structure in the contact region and effectively addresses the challenge of forming ohmic contacts in materials with strong Fermi-level pinning (FLP) effects.
The solar-blind photodetector fabricated using this method demonstrates excellent optoelectronic performance, providing a potential pathway for improving contact engineering and advancing the development of high-performance Ga₂O₃-based ultraviolet photodetectors.
11.Method and System for Regulating the Electrical Properties of Microscopic Defects in Gallium Oxide (Published on July 24)
According to information from the China National Intellectual Property Administration (CNIPA), Beijing Orient Semi Co., Ltd. has filed a patent application titled “Method and System for Regulating the Electrical Properties of Microscopic Defects in Gallium Oxide”, with publication number CN122454567A and application number 2026105691780.
The invention relates to the field of doping regulation of gallium oxide and discloses a method and system for tuning the electrical properties of microscopic defects in gallium oxide. The method includes collecting transmission electron microscopy (TEM) bright-field images of gallium oxide materials; identifying multiple defect-sensitive regions and performing stable cluster purification and regional clustering to form defect-sensitive region clusters and de-clustered abnormal points; determining representative areas for each defect-sensitive cluster, collecting dark-field images and high-resolution images of the representative areas, and identifying defect types, while independently analyzing abnormal points outside the clusters.
Based on the identification results of representative regions, dominant defect regions that cannot be effectively repaired are screened out in advance. For the remaining regions, repair coefficients are calculated and optimized doping parameters are recommended accordingly. The corresponding system is designed to implement the above process.
This invention can reduce the workload associated with subsequent high-resolution image acquisition and region-by-region defect identification, thereby improving the efficiency of microscopic defect detection and electrical property regulation in gallium oxide materials.
12.Vertical Gallium Oxide Heterojunction Diode with Composite Termination Structure and Fabrication Method (Published on July 24)
According to information from the China National Intellectual Property Administration (CNIPA), Xidian University has filed a patent application titled “Vertical Gallium Oxide Heterojunction Diode with Composite Termination Structure and Fabrication Method”, with publication number CN122458443A and application number 2026105489498.
The invention discloses a gallium oxide heterojunction diode with a composite termination structure and its fabrication method. It aims to address the limitations of existing gallium oxide Schottky diodes, including insufficient breakdown voltage, complex fabrication processes, and the difficulty of achieving p-type doping in gallium oxide.
The device structure, from bottom to top, consists of a Ti/Au metal layer, n⁺ β-Ga₂O₃ substrate, n⁻ β-Ga₂O₃ epitaxial layer, junction termination extension (JTE) layer, multiple guard ring layers, and Ni/Au metal layer. The multiple guard ring layer comprises 2–12 guard rings, with the width of each ring and the spacing between adjacent rings proportionally scaled according to a factor β.
The JTE layer and multi-guard-ring layer together form a composite termination structure, which reduces the peak electric field at the junction edge and improves the uniformity of the lateral electric field distribution within the depletion region, thereby enhancing the electrical performance of the device.
The proposed diode features effective edge electric-field suppression, high breakdown voltage, and simplified fabrication, making it suitable for applications in high-voltage switching devices and power electronic systems.
In addition to patents focusing on gallium oxide materials, several patents published this week also involve the application of gallium oxide as a functional material in other fields, which are provided for readers’ reference.
1.Rare-Earth-Free Ultra-Broadband Near-Infrared Phosphor and Its Applications (Published on July 21)
The National Intellectual Property Administration (CNIPA) has disclosed a patent application filed by Xiamen University of Technology titled “Rare-Earth-Free Ultra-Broadband Near-Infrared Phosphor, Preparation Method and Applications” (Publication No.: CN122427675A; Application No.: 2026106211901).
The invention relates to luminescent materials and discloses a rare-earth-free ultra-broadband near-infrared phosphor and its preparation method.
The phosphor uses magnesium aluminate spinel as the host material and adopts trivalent chromium ions as the sole activator. Ga₂O₃, Li₂O, and SiO₂ are introduced as synergistic modifiers to regulate the crystal-field strength of Cr³⁺ ions through superstoichiometric composition control, breaking inversion symmetry and improving light absorption efficiency.
The preparation process combines high-energy ball milling pretreatment with multi-step sintering to achieve uniform dispersion of Cr³⁺ ions within the host lattice.
The phosphor eliminates the need for rare-earth elements, reducing costs by more than 40%. It features ultra-broadband near-infrared emission, high quantum efficiency, and excellent thermal stability, addressing issues such as rare-earth dependence and severe thermal quenching in conventional near-infrared phosphors. It has potential applications in medical diagnostics, miniaturized spectrometers, and solar simulators.
