【International Papers】Exploring the efficacy of implementing field plate design with air gap on β-Ga₂O₃ MOSFET for high power & RF applications

      In the present work, source field plate design with an air gap has been studied on lateral β – Ga₂O₃ MOSFET with the objective of achieving improvement in high power as well as RF performance by employing exhaustive TCAD simulations. A comprehensive investigation of various analog Figure of Merits (FoMs) and RF Figure of merits (FoMs) have been carried out and a thorough comparison has been drawn between the proposed device β-Ga₂O₃ MOSFET with source field plate and air gap, the β-Ga₂O₃ MOSFET with gate field plate and the conventional β-Ga₂O₃ MOSFET. It can be noted that the proposed design yields significantly higher breakdown voltage and Power Figure of Merit (PFoM) as compared to gate field plate design and conventional device without any of these designs and also, the proposed design demonstrates improvement in RF performance as compared to gate field plate design.