【Others Papers】Ga₂O₃ microrods-functionalized In₂O₃ nanostructures for a low-temperature hydrogen gas sensor

      Researchers from Indian Institute of Technology Jodhpur have published a dissertation titled " Ga₂O₃ microrods-functionalized In₂O₃ nanostructures for a low-temperature hydrogen gas sensor " in International Journal of Hydrogen Energy.

Abstract

      Due to their low cost and easy manufacture, metal oxide semiconductor (MOS) sensors like indium oxide (In_₂O_₃) can detect H_₂, but their sensitivity and selectivity are generally restricted. Noble metal nanoparticles (NPs) can enhance sensing, but their high cost prevents widespread use. Gallium oxide (Ga_₂O_₃), on the other hand, is abundant and cost-effective. This study created a high-performance H_₂ sensor using In_₂O_₃ nanostructures produced via reactive gas vacuum evaporation (RGVO) and functionalized with Ga_₂O_₃ microrods. Optimal operating temperature for the Ga_₂O_₃/In_₂O_₃ device is 50 °C. The device responded ∼51% to ₂0 ppm H_₂, twice compared to the bare In_₂O_₃ sensor. The sensor strongly preferred H_₂ over other gases. The sensor has good response, recovery, durability, and repeatability. Enhanced sensing capability at 50 °C is achieved by the combination of In_₂O_₃ nanostructures and high surface area Ga_₂O_₃ microrods. This study proposed a low-cost, energy-efficient H_₂ sensing technology, making significant advancements.

DOI：

https://doi.org/10.1016/j.ijhydene.2026.156337