【Member News】Leading the Ga₂O₃ Industry Forward! Fujia Gallium Completes New Round of Over RMB 100 Million in Financing

      Last September, Hangzhou Fujia Gallium Technology Co., Ltd. (“Fujia Gallium”), a leader in fourth-generation semiconductor Ga₂O₃ materials, secured a hundred-million-yuan financing round led by Shenzhen Capital Group and China Internet Investment Fund. The firm has recently closed another financing round exceeding RMB 100 million.

      This round received joint investment from state-backed capital platforms and market-oriented institutions: Quzhou Dongfeng, Shanghai Sci-Tech Innovation, Fuyang Industrial Investment and Yuanchuang Fund. Existing investors including China Internet Investment Fund and Optech Partner Equity Investment also participated in follow-on investments, which fully validates new and incumbent investors’ high recognition of Fujia Gallium’s industry-leading status and industrialization capacity in the Ga₂O₃ sector.

      Funds raised in this round will be mainly allocated to three areas: R&D and mass production of large-size Ga₂O₃ single crystals and epitaxial wafers, joint performance verification with downstream power device manufacturers, and continuous R&D & iteration of core crystal growth equipment.

      Fujia Gallium has built end-to-end independent innovation capacity covering the full industrial chain: core crystal equipment, single crystal growth, substrate machining and thin-film epitaxy, forming a closed-loop system from technical research to mass production. Adopting a dual-driven development strategy centered on equipment and process technologies, the company is the world’s sole holder of proprietary 12-inch Ga₂O₃ single crystal growth technology. The electron mobility of its epitaxial films is close to the theoretical limit of Ga₂O₃, hitting the highest level disclosed globally; the company has also realized 12-inch epitaxial wafer mass production capability.

      Recently, Fujia Gallium entered into a strategic cooperation agreement with Marching Power Group, a leading power device enterprise. Drawing on complementary strengths, the two sides will carry out all-chain collaborative innovation covering substrates, epitaxy, devices, modules and end applications, to collectively speed up the industrialization of fourth-generation semiconductor Ga₂O₃.

Fujia Gallium Founder Qi Hongji said:

      “Gallium oxide is now approaching a critical turning point, with the entire value chain from materials to devices becoming increasingly interconnected. The completion of this financing round represents strong market recognition of our path combining advanced technology with industrialization capabilities.

      Going forward, we will continue to strengthen our advantages in large-size single-crystal growth and high-quality epitaxy, work closely with upstream and downstream partners across the industry chain, and build a globally competitive industrial hub for fourth-generation semiconductor gallium oxide materials.”

Statement from Yu Xiaohui, Vice President of Quzhou Dongfeng said:

      Fourth-generation semiconductors represent a key transformation track for the global semiconductor industry and a strategic high ground for future tech competition, and the sector is ushering in a pivotal phase of large-scale commercial adoption. Centered on Ga₂O₃ core materials, Fujia Gallium has persisted in independent innovation and pioneered a ten-thousand-wafer-scale production line for Ga₂O₃ materials, delivering remarkable breakthroughs in both technical R&D and industrial rollout.

      Moving forward, Quzhou Dongfeng will capitalize on its strengths in industrial investment and resource coordination, cooperate with industry partners up and down the chain to accelerate the matching and commercial launch of core materials and terminal products. We will join hands to drive high-quality development of China’s fourth-generation semiconductor industry.

Statement from a Project Lead at Shanghai Sci-Tech Innovation Group said:

      Gallium oxide, as a representative fourth-generation semiconductor material, is an important strategic direction for China’s future advanced materials industry. The sector is currently at a critical stage of transitioning from scientific and technological research to industrial-scale applications.

      Fujia Gallium has been deeply engaged in the gallium oxide sector for many years and has undertaken a number of major national science and technology projects. The company has achieved independent control over the equipment and processes for growing gallium oxide crystals ranging from 2 to 12 inches, and has established an integrated industrial system covering “equipment–substrates–epitaxy.” With a portfolio of core patents in China and abroad, Fujia Gallium has demonstrated strong capabilities in both sustained R&D and industrialization.

      Going forward, Shanghai Sci-Tech Innovation Group will leverage the platform advantages of state-owned capital investment to continue supporting breakthroughs in key technologies across the gallium oxide value chain and the commercialization of scientific and technological achievements, providing sustained support for innovation and high-quality development of China’s fourth-generation semiconductor industry.

Statement from China Internet Investment Fund said:

      China’s 15th Five-Year Plan explicitly calls for accelerating the industrialization of ultra-wide-bandgap semiconductors, including gallium oxide, making gallium oxide an important strategic material for the development of China’s fourth-generation semiconductor industry.

      Building on a solid foundation in materials research, Fujia Gallium has taken the lead in establishing a full-chain technology system covering “equipment–substrates–epitaxy,” while continuing to make significant progress in core technology breakthroughs and industrial development.

      Going forward, China Internet Investment Fund will leverage its extensive investment network to continue supporting technological innovation and industrial development, accelerate the application of gallium oxide in key fields such as new-energy power grids, 6G communications, and aerospace, and contribute to greater technological self-reliance and controllability in China’s semiconductor industry.

Statement from Wei Yajie, Partner at Yuanchuang Fund said:

      As a core material for fourth-generation semiconductors, gallium oxide is entering an important period of technological breakthroughs and industrialization. Large-size, low-cost material production and intelligent manufacturing capabilities will be key drivers of the industry’s future development.

      Fujia Gallium has been deeply engaged in the gallium oxide sector and was among the first in the world to introduce AI technology into the crystal-growth process, enabling its “one-click crystal growth” technology, for which it has obtained international patent protection. The deep integration of high-precision thermal-field simulation and AI technologies has accelerated breakthroughs in large-size single-crystal growth, laying a solid foundation for reducing the cost of gallium oxide substrates and accelerating large-scale commercialization.

      Yuanchuang Fund has already invested in and developed a portfolio covering several crystal-material directions, including silicon carbide, gallium oxide, gallium nitride, and lithium niobate. Going forward, the fund will continue to focus on hard-tech fields such as optoelectronic functional materials, supporting companies in leveraging their technological and industrialization strengths and jointly advancing the high-quality development of China’s fourth-generation semiconductor industry.

Statement from He Jie, Partner at Optech Partner Equity Investment, said:

      Since its angel-round investment, Optech Partner Equity Investment has remained closely involved in Fujia Gallium’s growth, witnessing the company’s development from technology validation and product R&D to industrial-scale commercialization. As a representative fourth-generation semiconductor material, gallium oxide is seeing accelerating industrialization, driven by its excellent voltage withstand capability, conversion efficiency, and cost advantages.

      Fujia Gallium has remained committed to technological innovation, achieving continuous breakthroughs in key areas including crystal growth, substrate preparation, and epitaxial processes. These advances have established the company as a leading player in the field both in China and internationally, while enabling it to rapidly translate its technological strengths into industrial advantages and progressively build comprehensive commercialization capabilities.

      As an angel investor, Optech Partner Equity Investment’s decision to further increase its investment in this round reflects not only its strong confidence in the fourth-generation semiconductor sector, but also its recognition of Fujia Gallium’s technological capabilities, execution strength, and long-term growth potential.

      China’s 15th Five-Year Plan has, for the first time, identified the industrialization of gallium oxide as a national strategic priority. During this historic policy window, Fujia Gallium will continue to focus on breakthroughs in core technologies for gallium oxide materials and equipment, as well as their industrial-scale commercialization, helping China build international competitiveness in ultra-wide-bandgap semiconductor materials and contributing to the country’s pursuit of high-level technological self-reliance and strength.

About Fujia Gallium

      Hangzhou Fujia Gallium Technology Co., Ltd. was established on December 31, 2019. The company takes “Bringing Better Materials to the World” as its vision, and commits to the industrialization of ultra-wide bandgap semiconductor gallium oxide materials.

      The company is a national high-tech enterprise, a Zhejiang Provincial specialized, refined, unique and innovative small and medium-sized enterprise, and a "quasi-unicorn" enterprise. It has undertaken many national and provincial-level projects from the Ministry of Science and Technology, National Development and Reform Commission, Ministry of Industry and Information Technology and other departments. It has obtained 65 authorized patents at home and abroad. It is the initiator and the first drafting unit of national standards in China’s gallium oxide industry. A series of important achievements achieved by the company in promoting gallium oxide industrialization have been reported and publicized by well-known media such as CCTV, People’s Daily, Xinhuanet, Science and Technology Daily, China Securities Journal and The Paper.