Member News
【Member News】Exhibition Invitation: Hangzhou Fujia Gallium Technology Co.,Ltd Cordially Invites You to Attend the 20th National Conference On Crystal Growth And Materials
日期：2026-08-21阅读：230
The 20th National Conference on Crystal Growth and Materials will be held from August 22 to 25, 2026, at the South Suburb Hotel in Jinan, Shandong Province. Hangzhou Fujia Gallium Technology Co., Ltd. will showcase its premium exhibits at the conference, and its founder and chairman, Qi Hongji, has been invited to deliver a keynote presentation at a sub-forum.
Organized by the Crystal Growth and Materials Division of the Chinese Ceramic Society and the Chinese Ceramic Society, and hosted by Shandong University, the conference will feature concurrent industry forums on crystal applications and equipment exhibitions. It is one of the largest and most academically prestigious comprehensive events in the field of crystal materials in China. We warmly welcome experts, scholars, and peers to visit the presentation and the Fujia Gallium exhibition booth for exchanges and guidance!
01 Invited Presentation
Presenter:
Qi Hongji
Founder & Chairman, Hangzhou Fujia Gallium Technology Co., Ltd.
Director, Hangzhou Institute of Optics and Precision Mechanics
Professor, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences
Title:
"Preliminary Analysis on the Industrialization Status of Gallium Oxide Single Crystals and Epitaxial Materials"
Time:
August 24, 2026 | 10:25–10:45
Venue:
VIP Hall, 1st Floor, Blue Hall Building – Semiconductor Crystal Session B
02 Fujia Gallium Exhibits
1. Gallium Oxide Substrates
Key Specifications:
Size: 6-inch
FWHM of double-crystal rocking curve: ≤150″
Carrier concentration: 1×10¹⁶–10¹⁹ cm⁻³
2. Gallium Oxide Epitaxial Wafers
Key Specifications:
Size: 8-inch
FWHM of double-crystal rocking curve: ≤150″
Carrier concentration: 1–2×10¹⁶ cm⁻³
3. Gallium Oxide SBD Devices
Key Specifications:
Size: 6-inch
Breakdown voltage: >1200 V
Forward current: >5 A @ 3 V
4. EFG "One-Click Crystal Growth" Equipment
Key Specifications:
Maximum temperature: 2100 °C
Heating type: Medium-frequency induction heating, 40 KW
Maximum pulling height: 500 mm
Weighing range: 20 kg / resolution 10 mg
Operating atmosphere: Ar/O₂/CO₂ (configurable)
5. Intelligent VB-Method Crystal Growth Equipment
Key Specifications:
Maximum temperature: 1820 °C
Heating type: Resistive heating (other heating options available)
Rotation speed: 0.1–30 r/min
Operating atmosphere: Air/Ar/O₂/CO₂ (configurable)
Temperature accuracy: ±1 °C (±0.1 °C optional)
03 About Fujia Gallium
Hangzhou Fujia Gallium Technology Co., Ltd. was established on December 31, 2019. The company takes “Bringing Better Materials to the World” as its vision, and commits to the industrialization of ultra-wide bandgap semiconductor gallium oxide materials.
The company is a national high-tech enterprise, a Zhejiang Provincial specialized, refined, unique and innovative small and medium-sized enterprise, and a "quasi-unicorn" enterprise. It has undertaken many national and provincial-level projects from the Ministry of Science and Technology, National Development and Reform Commission, Ministry of Industry and Information Technology and other departments. It has obtained 65 authorized patents at home and abroad. It is the initiator and the first drafting unit of national standards in China’s gallium oxide industry. A series of important achievements achieved by the company in promoting gallium oxide industrialization have been reported and publicized by well-known media such as CCTV, People’s Daily, Xinhuanet, Science and Technology Daily, China Securities Journal and The Paper.
