【Epitaxy Papers】Compositionally tunable (AlₓGa₁₋ₓ)₂O₃ ultra-wide-bandgap multilayers

      Researchers from Texas Tech University have published a dissertation titled " Compositionally tunable (AlxGa1-x)₂O₃ ultra-wide-bandgap multilayers " in Materials Science in Semiconductor Processing.

Abstract

      Gallium oxide (Ga₂O₃) (GO) and aluminum gallium oxide (AlxGa1-x)₂O₃ (AGO) are promising semiconductor oxides for deep-UV optoelectronics and high-power electronics applications. Despite recent efforts to realize ultra-wide bandgap AGO films grown by different deposition techniques, high aluminum content β-type AGO films remain a challenge. In this work, a multilayer sputtering deposition strategy is introduced, in which Al-only layers are periodically incorporated between GO or AGO layers. This controlled Al stacking method effectively increases the Al incorporation in AGO and leads to an optical bandgap increase when compared to uniform AGO. The multilayer approach allows for tunable Al composition and sputtering target-oxidation resistant alternative to the conventional co-sputtering method for obtaining ultra-wide-bandgap Al-rich AGO thin films.

DOI：

https://doi.org/10.1016/j.mssp.2026.110706