【Epitaxy Papers】Effect of V doping on the microstructural and photoelectric properties of Ga₂O₃ films

      Researchers from Kunming University of Science and Technology have published a dissertation titled " Effect of V doping on the microstructural and photoelectric properties of Ga₂O₃ films " in Materials Letters.

Abstract

      V-doped Ga₂O₃ films were prepared by magnetron sputtering, and their microstructure, optical properties, and photoelectric behavior were analyzed. We found that the successful integration of V into Ga₂O₃, occupying Ga vacancies, causes a lattice contraction and regulates oxygen vacancy defects, and the band gap width. Films deposited at 30 W demonstrated optimal crystallinity, achieving an average visible light transmittance of 85% and an optical band gap of 3.91 eV. V-doping enhanced N-type conductivity, improved ultraviolet photoelectric response, and offered insights for deep ultraviolet optoelectronic applications.

DOI：

https://doi.org/10.1016/j.matlet.2026.141145