【Device Papers】Optimized HZO/Al₂O₃ gate stack enables thermally stable β-Ga₂O₃ ferroelectric field-effect transistors with an enhanced memory window

      Researchers from Seoul National University have published a dissertation titled " Optimized HZO/ Al₂O₃ gate stack enables thermally stable β-Ga₂O₃ ferroelectric field-effect transistors with an enhanced memory window " in Device.

Abstract

      Developing nonvolatile memory and logic devices that operate reliably across extreme temperatures is critical for aerospace, automotive, and deep-space applications. Here, we present a dual-gate ferroelectric field-effect transistor that combines an ultrawide-band-gap β-gallium oxide channel with an optimized hafnium zirconium oxide/aluminum oxide (8/2 nm) gate stack. The interlayer reduces the interface trap density to 1.1 × 10¹¹ cm⁻²·eV⁻¹ and enables a memory window of 10.6 V with stable anticlockwise hysteresis. The device maintains reliable ferroelectric switching and nonvolatile memory operation from cryogenic (98 K) to elevated (378 K) temperatures. The wide-temperature resilience arises from competing mechanisms, i.e., between thermally activated charge compensation at high temperatures and reduced electrostatic screening at cryogenic conditions. By programming the ferroelectric polarization state, a single transistor is dynamically reconfigured between AND and OR logic, establishing a platform for harsh-environment nonvolatile memory and reconfigurable logic electronics.

DOI：

https://doi.org/10.1016/j.device.2026.101251