【Domestic News】Hangzhou Company Begins SiC–Ga₂O₃ Hybrid Module Validation, Advancing from Third-to Fourth-Generation Semiconductors

      Recently, Hangzhou Spectrum Semiconductor Technology Co., Ltd. (“Spectrum Semi”) officially launched a proof-of-concept validation program for “SiC + gallium oxide (Ga₂O₃)” hybrid power modules.

      The initiative represents the first engineering effort in China’s specialized power semiconductor sector to deeply integrate third-generation semiconductors (SiC) and fourth-generation semiconductors (Ga₂O₃) at the system level. It marks a key step in Spectrum Semi’s evolution from a company focused on specialized applications of third-generation semiconductors toward becoming an extreme-environment energy thermodynamics architect for “third-generation × fourth-generation semiconductor integration.”

I. Beyond Third-Generation Semiconductors: Spectrum Semi’s Fourth-Generation Semiconductor Layout Is Already Underway

      Since its founding, Spectrum Semi has built rare engineering capabilities for extreme-environment scenarios such as deep-Earth exploration, aerospace power supplies, special-purpose robots and AI computing, by adopting technologies including 230 °C-rated SiC power chips, thick-film ceramic solder-free packaging, and multi-layer high-temperature junction-temperature compensation networks.

      Nevertheless, Spectrum Semi’s technological landscape is not limited to third-generation semiconductors. Starting from 2024, the company has carried out systematic pre-research on fourth-generation semiconductors (gallium oxide, diamond, aluminum nitride). Its focus lies on the “later-stage engineering work” for ultra-wide-bandgap devices: packaging adaptability, junction-temperature management and system integration. These constitute critical bottlenecks for fourth-generation semiconductors to move from material breakthroughs to practical device implementation, and also represent the core competencies that Spectrum Semi has built up over years.

      Up to now, Spectrum Semi has filed a number of invention patents for fourth-generation-semiconductor-related fields, covering core links including high-temperature packaging compatibility design, junction-temperature sensing for ultra-wide-bandgap devices, and driving-and-protection technologies for hybrid topologies. Instead of merely “paying attention to” fourth-generation semiconductors, the company takes its engineering capabilities as the entry point and deeply participates in the value-chain reconstruction of fourth-generation semiconductors as they evolve from “usable materials” to “workable systems.”

II. Industry-First: SiC-Ga₂O₃Hybrid Power Module Bridging the Physical Gap Between High Frequency and High Voltage

      At the heart of this proof-of-concept validation is a hybrid-topology reference power supply featuring “SiC high-frequency chopping + Ga₂O₃ high-voltage blocking”.

      SiC delivers the “speed”: A 1 700 V SiC MOSFET undertakes high-frequency switching, giving full play to its advantages of high frequency and low loss under medium-voltage conditions.

      Ga₂O₃ provides the “blocking capability”: The in-house-developed gallium-oxide Schottky Barrier Diode (SBD) performs high-voltage rectification and steady-state blocking. Leveraging its physical properties including ultra-wide bandgap (4.8 eV) and ultra-high critical breakdown electric field (8 MV/cm), it achieves higher voltage-withstand ratings with fewer components.

      System-level integration: Spectrum Semi’s proprietary thick-film ceramic packaging platform and multi-layer high-temperature junction-temperature compensation network integrate semiconductor devices of two different generations into one single power module, enabling coordinated operation of high-frequency and high-voltage functions.

      The engineering significance of this topology architecture is as follows: Conventional high-voltage power-supply solutions rely on multiple series-connected SiC devices to boost withstand voltage, which brings about challenges of voltage balancing, higher driver complexity and accumulated system losses. By contrast, the SiC-Ga₂O₃ hybrid topology lets SiC focus on its strength: high-frequency switching, while high-voltage blocking is undertaken by Ga₂O₃ diodes. The Ga₂O₃ diode features no gate electrode, zero gate-drive loss and zero reverse-recovery charge. It achieves higher overall efficiency and reliability with fewer components and a simpler system architecture.

III. Toward Space Computing: Next-Generation Infrastructure for Extreme-Environment Energy Conversion

      Spectrum Semi’s strategic consideration of adopting SiC-Ga₂O₃ hybrid power modules as its entry point into fourth-generation semiconductors stems from its assessment of future demands for energy conversion in extreme-environment scenarios.

      As scenarios such as space-computing constellations, deep-space exploration and on-orbit data centers move from concept to engineering implementation, the bus voltage of power systems will jump from the present 100-300 V to 800-1 200 V, and further evolve toward 1 500 V and above in the long run. Challenges brought by higher voltage ratings, including device withstand-voltage capability, thermal management, radiation tolerance, size and weight, will far exceed the performance limits of third-generation semiconductors as a standalone solution.

      Spectrum Semi’s SiC-Ga₂O₃ hybrid topology serves as an engineering solution tailored for this generational leap:

      Voltage margin: A single gallium-oxide device can theoretically reach the 10 kV withstand-voltage level, leaving ample headroom for continuous upgrades of bus voltage in the future.

      Radiation-tolerance advantages: The gate-free structure of gallium-oxide diodes inherently avoids the risk of gate breakdown for SiC MOSFETs under bombardment by high-energy particles in space.

      Thermal-management adaptability: Spectrum Semi’s 230 °C system-level temperature resistance together with thick-film ceramic packaging provides system-level compensation for the disadvantage of low thermal conductivity of gallium oxide.

      Weight & efficiency benefits: Fewer components, simpler driving systems and higher overall efficiency directly translate into weight reduction and lower thermal burden for aerospace payloads.

IV. From Deep Earth to Space: Spectrum Semi Expands Its “Extreme-Environment Energy Thermodynamics” Business Layout

      Spectrum Semi has already built a multi-scenario business portfolio covering “going underground” (230 °C-rated power supplies for oil logging at 6 000-meter underground wells), “going into space” (radiation-hardened space-borne power systems and Hall-effect electric propulsion modules), special-purpose robot joint modules, “going into computing” (SiC power supply chains for AI intelligent computing centers and PX-EnergyStack power-computing collaboration), and “exploring the future” (pre-research on power supplies for controlled nuclear fusion).

      The launch of proof-of-concept validation for the SiC-Ga₂O₃ hybrid power module marks another milestone for Spectrum Semi under its “exploring the future” initiative. It covers not only controlled nuclear fusion, but also space computing, a cutting-edge direction recognized as “next-generation computing infrastructure”.

      Xu Yili, Founder and CEO of Spectrum Semi, commented:

      “Third-generation semiconductors realize power generation in environments where silicon-based devices cannot survive. Fourth-generation semiconductors will enable power generation under higher voltage, stronger radiation and more extreme temperature conditions. Spectrum Semi is not a material manufacturer limited to any single semiconductor generation; instead, we act as a cross-generation architect for extreme-environment energy thermodynamics. We will not be followers in material development, but pioneers in system-level applications.”

About Spectrum Semi

      Hangzhou Spectrum Semiconductor Technology Co., Ltd. (SPECTRUM SEMICONDUCTOR) is a Tsinghua-background special-purpose power-semiconductor enterprise. It focuses on 230 °C-rated special-purpose chips, HS-MCM ceramic packaging systems and extreme-environment energy-management algorithms. Its business covers scenarios including deep-Earth energy exploration, aerospace launch vehicles, special-purpose robots, AI computing and controlled nuclear fusion.

      As a national Specialized, Refined, Unique & Innovative “Little Giant” enterprise, the company recorded sales revenue of approximately RMB 230 million in 2025 and has completed eight rounds of financing totalling hundreds of millions of RMB.