【Device Papers】1 MeV Proton-Induced Damage in β-Ga₂O₃ Schottky Barrier Diodes under Forward Bias

      Researchers from Rice University have published a dissertation titled " 1 MeV Proton-Induced Damage in β-Ga₂O₃ Schottky Barrier Diodes under Forward Bias " in IEEE Transactions on Materials for Electron Devices.

Abstract

      This paper presents characterization and analysis of β-Ga₂O₃ Schottky barrier diodes subjected to 1 MeV proton irradiation at fluences up to 10¹³ p/cm². The forward-bias current voltage characteristics showed significant degradation with increasing irradiation fluence. Extraction of key device electrical parameters based on model calculations showed that the main contribution to the radiation response was a change in the series resistance of the β-Ga₂O₃ epilayer. The change in epilayer series resistance was associated with a change in effective doping density resulting from carrier removal by radiation-induced defects. Defect densities resulting from 1 MeV protons at the relevant fluence were confirmed with SRIM (Stopping and Range of Ions in Matter) and TRIM (Transport of Ions in Matter) simulations. These results are beneficial for the future development of Ga₂O₃ electronics and optoelectronics in harsh environments.

DOI：

https://doi.org/10.1109/TMAT.2026.3716608