【Epitaxy Papers】Effect of oxygen plasma power on temperature-dependent crystallization and Er³⁺ luminescence in Er-doped Ga₂O₃ thin films

      Researchers from Saga University have published a dissertation titled " Effect of oxygen plasma power on temperature-dependent crystallization and Er³⁺ luminescence in Er-doped Ga₂O₃ thin films " in Materials Research Bulletin.

Abstract

      High crystallization temperatures limit processing of Er-doped Ga₂O₃ on temperature-sensitive platforms. This study examined how oxygen plasma power affects low-temperature crystallization and Er³⁺ emission. Films were grown on sapphire at 100–500 °C by oxygen plasma-assisted pulsed laser deposition at 100 and 300 W. Increasing the power to 300 W shifted the lowest investigated temperature for well-resolved β-Ga₂O₃ diffraction from 500 to 300 °C. At 300 °C and 300 W, the (−402) rocking-curve component had a 0.10° full width at half maximum (FWHM), while the (−402) reciprocal-space map had a Q_z FWHM of 0.0130 Å⁻¹. The film also showed a steep absorption edge and well-resolved green Er³⁺ emission. Energy-dispersive X-ray spectroscopy showed that higher photoluminescence intensity under 300 W was not accompanied by a higher Er/(Er + Ga) ratio. Thus, 300 W and 300 °C provided a lower-temperature condition for preferentially oriented, luminescent Er-doped Ga₂O₃ films.

DOI：

https://doi.org/10.1016/j.materresbull.2026.114441