【Member Intro】Team of Hunan University "Pass the Flame" —— Regular Member

Introduction of the research team

      Professor Lu Jiwu, doctoral supervisor, professor, from Liuyang, Hunan province, selected the "100 Talents Plan" of Hunan Province. In 2001 after graduating from the Department of Physics of Zhejiang University, he won the scholarship(DAAD) of Deutsche Academic Exchange Center to study in the Department of Physics of Siegen University in Germany, and then he went to study for a doctorate in the Semiconductor Device Group of the Department of Electronic Information Engineering, Twente University in the Netherlands. After graduation, he worked in the CMOS Device and Reliability Group of the National Institute of Standards and Technology of America for many years. He joined Hunan University in 2015, and in 2019, he was awarded by the " Hunan Huxiang High-level Talents Focus Engineering-Innovative Talents”. He is member of IEEE Electronic Device Association, member of Hunan Electrotechnical Society, expert tutor of Core Fire Entrepreneurship and Innovation Base (platform) of Ministry of Industry and Information Technology, expert tutor of entrepreneurship of Changsha Integrated Circuit Design Base, industry commissioner of Changsha new generation semiconductor integrated circuit industry chain, etc.

      During over 10 years of studying and working in Europe and the United States, Professor Lu Jiwu has actively participated in the research of advanced complementary metal-oxide-semiconductor (CMOS) integrated circuit devices and processes, including device reliability circuit testing, the design and testing of ultra-fast circuits, micro-energy chips and so on. In the doctoral stage, the "micro energy integrated chip" self-powered the wireless network sensors in the Internet of Things, which was highly recognized by the industry; The "Fast Test Circuit Test System", which he developed when working in the National Institute of Standards and Technology, broke the world record of the electrical performance test speed at that time, and obtained the electrical characteristic parameters of the device in the real CPU for the first time. So far, he has published 13 top academic papers and 55 published in SCI / EI. He has been invited many times to report his research results on IEEE International Electron Devices Meeting (IEDM) and IEEE VLSI Symposia in the field of electronic devices.

      Associate Professor Zhai Dongyuan, PhD, doctoral supervisor, received her bachelor's degree from Nanjing University of Aeronautics and Astronautics in 2009 and her doctor's degree from Nanjing University in 2014. In 2016, she left Zhejiang University postdoctoral station. She is now an associate professor in the Department of Electronics, School of Electrical and Information Engineering, Hunan University. She mainly studies the preparation process and structural design simulation of silicon carbide power devices, and the explores deeply the microscopic physical operation mechanism of devices.

Since 2021, the team has started the research on wide band gap semiconductor gallium oxide. The main research interests include TCAD modeling of gallium oxide materials, process improvement and characterization of gate medium / gallium oxide interface, process development and device preparation of gallium oxide vertical high voltage Schottky diode and MOSFET.

Photos of Research Team

The research team of Hunan University has graduated 9 graduates in the past two years, including 4 doctoral students and 13 master students.

Papers and Scientific Research Projects

1、Papers in the past two years

[1] Yisong Shen, Qihao Zhang, Kai Xiao, Ning Xia, Hui Zhang, Dongyuan Zhai, Min He, Jiangwei Liu, Jiwu Lu, Design and optimizing of trench Schottky barrier-controlled β-Ga₂O₃ Schottky diode with low turn-on voltage and leakage current, Micro and Nanostructures, 2022.

[2] Q. Zhang, Y. Shen, J. Liu, C. Tu, D. Zhai, M. He, and J. Lu, “Low Interface Trapped Charge Density for Al2O3/β-Ga2O3 (001) Metal-Insulator-Semiconductor Capacitor,” IEEE Journal of the Electron Devices Society, 2022.

[3] Dongyuan Zhai, Zhipei Lv, Yi Zhao, Jiwu Lu, Pre-deposition growth of interfacial SiO2 layer by low-oxygen-partial-pressure oxidation in the Al₂O₃/4H-SiC MOS structure, Microelectronic Engineering, 2021.

[4] Dongyuan Zhai, Dan Gao, Jing Xiao, Xiaoliang Gong, Jin Yang, Yi Zhao, Jun Wang, Jiwu Lu, Electrical characterization of near-interface traps in thermally oxidized and NO-annealed SiO₂/4H-SiC metal-oxide-semiconductor capacitors, J. Phys. D. Appl. Phys, 2020.

[5] Qihao Zhang, Jiwu Lu, Dongyuan Zhai, Jing Xiao, Min He, Jiangwei Liu, Electrical Properties of Al₂O₃/ZnO Metal–Insulator–Semiconductor Capacitors, IEEE Transactions on Electron Devices, 2020.

2、Related Research Projects in the Recent Five Years

1. Reliability consideration on gate oxygen quality of silicon carbide power MOSFET
2. Study on electrical response mechanism in near-interface defects of SiC MOS devices and process improvement method 
3. Research on the mechanical process and simulation design of SiC power electronic devices
4. Mechanical and experimental study of the influence of silicon carbide / silica interface state on the electrical performance of MOSFET
5. Huxiang High-level Talents Focus Engineering-Innovative Talents.
6. Interface state and reliability study of 4H-SiC MOSFET devices
7. Grid media / Gallium oxide interface properties and their influence on MISFETs device properties

Main Research Directions