【Member News】Industry Fast Track | Spectrum Semiconductor and Fujia Gallium Sign Strategic Cooperation Agreement

      Recently, Hangzhou Spectrum Semiconductor Technology Co., Ltd. (hereinafter referred to as “Spectrum Semiconductor”) and Fujia Gallium Technology Co., Ltd. (hereinafter referred to as “Fujia Gallium”)  officially signed a strategic cooperation agreement. Building on their respective technological and industrial expertise in ultra-wide-bandgap semiconductor materials, as well as high-reliability power chips, modules, and systems, the two companies will explore applications of gallium oxide devices in areas including deep-earth environments, aerospace, specialized robotics, AI computing, and controlled nuclear fusion.

      Fujia Gallium has been deeply engaged in the industrialization of gallium oxide materials and has established a technology portfolio covering single-crystal growth, substrate processing, MOCVD/MBE homoepitaxy, and device verification, enabling the supply of large-size, high-quality gallium oxide substrates and epitaxial materials to downstream customers. Spectrum Semiconductor, meanwhile, focuses on the design, manufacturing, and application of specialized chips, modules, and power supply systems, with extensive experience in chip development, module integration, and system design, as well as applications requiring high-temperature operation, high power density, high efficiency, and high reliability.

      The two companies connect the material side of the industrial chain with the device and system application side. Fujia Gallium’s material and process capabilities can provide a material foundation for Spectrum Semiconductor’s device and system development, while Spectrum Semiconductor’s product development experience and application requirements can provide direct feedback for material optimization and process iteration. Based on this complementary relationship, the two parties will focus on collaboration in areas including gallium oxide substrate and epitaxial material evaluation, coordinated development of device structures and processes, sample iteration, reliability testing, module integration, system validation, and application scenario expansion. Through these efforts, they aim to establish a closed loop from material improvement to device validation and ultimately system application, accelerating the transition of gallium oxide technologies toward industrial applications.

      This agreement marks an important starting point for the two companies to leverage their respective strengths and deepen industrial collaboration. Going forward, the two parties will continue to advance the implementation of collaborative outcomes through joint efforts in key technology development, product validation, and application scenario expansion, helping accelerate the transition of gallium oxide from high-quality materials to high-performance devices and system applications. Fujia Gallium will also continue to provide stable and reliable products and services to industry partners, with the goal of making high-quality materials accessible to the world.

About the Two Companies

      Spectrum Semiconductor is a Tsinghua-affiliated company specializing in the design, manufacturing, and application of specialized power systems integrating third-generation semiconductors (SiC) and fourth-generation semiconductors (gallium oxide). Starting with the development of ultra-high-temperature semiconductor systems, the company has gradually expanded its focus to specialized chips, specialized modules, and specialized semiconductor systems. The team has 15 years of experience in high-temperature semiconductor system R&D overseas and has long worked in areas including deep-earth energy exploration and aerospace satellites, achieving notable high-temperature performance records in these fields. After returning to China, the team expanded its applications to deep-earth environments, aerospace, specialized robotics, AI computing, and controlled nuclear fusion, with the goal of developing cross-generational energy and thermodynamic architectures for extreme environments.

      Fujia Gallium was established on December 31, 2019. With the vision of “making high-quality materials accessible to the world,” the company is dedicated to the industrialization of the ultra-wide-bandgap semiconductor material gallium oxide. It is recognized as a National High-Tech Enterprise, a Specialized and Innovative SME in Zhejiang Province, and a “quasi-unicorn” company. Fujia Gallium has undertaken multiple national- and provincial-level projects supported by the Ministry of Science and Technology, National Development and Reform Commission, and Ministry of Industry and Information Technology, among others, and has obtained 70 granted domestic and international patents. The company has announced the world’s first 12-inch gallium oxide ingot and was an initiating organization and the first drafting organization for a national standard in the field of gallium oxide in China. Its achievements in advancing the industrialization of gallium oxide have been reported by media outlets including CCTV, People’s Daily, Xinhua News Agency, Science and Technology Daily, China Securities Journal, and The Paper.