【Other Papers】Three-dimensional visualization of lattice defects in β-Ga₂O₃ via synchrotron-radiation Borrmann-effect X-ray topo-tomography

      Researchers from Mie University have published a dissertation titled " Three-dimensional visualization of lattice defects in β-Ga₂O₃ via synchrotron-radiation Borrmann-effect X-ray topo-tomography " in Applied Physics Letters.

Abstract

      β-Ga₂O₃ is a promising material for next-generation power electronics; however, its performance is strongly affected by lattice defects such as dislocations. In this study, we demonstrate three-dimensional (3D) visualization of dislocations in β-Ga₂O₃ using synchrotron-radiation X-ray topo-tomography under a two-beam Borrmann-effect condition in transmission X-ray topography. By rotating the sample about the diffraction vector and acquiring a series of topo-tomographic images at different rotation angles, the evolution of dislocation contrast is captured, providing intuitive, depth-resolved visualization of dislocations. This method enables clear separation of dislocations in the epilayer and substrate in Schottky barrier diode structures, offering insight into dislocation propagation and their impact on epitaxial growth and device performance. This study represents the first demonstration of 3D dislocation reconstruction in β-Ga₂O₃.

DOI：

https://doi.org/10.1063/5.0339598