【Device Papers】Effect of Post-Deposition Annealing on the Performance of Ga₂O₃/Si Heterojunction Deep-UV Photodetectors

      Researchers from King Mongkut's University of Technology Thonburi have published a dissertation titled " Effect of Post-Deposition Annealing on the Performance of Ga₂O₃/Si Heterojunction Deep-UV Photodetectors " in ICMIMT.

Abstract

      This study investigates the influence of post-deposition annealing (PDA) on the performance of Ga₂O₃/Si heterojunction photodetectors fabricated via RF magnetron sputtering. The structural, morphological, and optoelectronic properties were systematically characterized across annealing temperatures ranging from as-deposited to 900 °C. XRD analysis reveals a significant transition from an amorphous phase to a crystalline β- Ga₂O₃ phase at 900 ℃，which is further supported by SEM observations showing a dense and uniform grain structure. Electrical measurements under Deep-UV illumination demonstrate that the 900 °C annealed device achieves a superior photocurrent of 550 nA and a peak photo-to-dark current I_ph/I_dark ratio of 22. Notably, this optimal performance is reached at a low operating bias of 0.2 V, indicating high sensitivity and low power consumption. These results highlight the critical role of thermal optimization in enhancing the crystalline quality and charge transport efficiency of Ga₂O₃ films, providing a robust protocol for developing high-performance solar-blind sensors for intelligent industrial monitoring applications.

DOI：

https://doi.org/10.1109/ICMIMT69639.2026.11642889