【Member News】With the opening ceremony of ISPSD 2023 approaching, One Oral Report and One Poster Paper from Xidian University have been Selected

      The 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) will be held in Hong Kong, China from May 28 to June 1,2023. This is the third time in Chinese mainland since ISPSD was held 35 years ago. The first of the three was in Hong Kong in 2015 and the second of the three in Shanghai in 2019.

      Among ISPSD papers, 7 are involved in oxide semiconductor, including five academic papers (2 from Xidian University, 1 from the University of Science and Technology of China,  1 from Nanjing University, 1 from Virginia University of Technology). In addition, there are two papers from Japanese industry, Novel Crystal Technology and Flosfia Inc. are aiming at the automotive market.Kengo Takeuchi from Flosfia Inc.is invited to do conference keynote report.

      The research results of Professor Ma Xiaohua and Associate Professor Li Yuan, who are headed by academician Hao Yue, School of Microelectronics, Xidian University, respectively introduced the research progress of enhanced gallium oxide (β-Ga₂O₃) metal heterojunction composite field effect transistors and thermoelectric co-designed gallium oxide (Ga₂O₃) groove diode. According to China Economic Times, at the 2023 China Optical Valley Jiufeng Mountain Forum and Compound Semiconductor Industry Conference, Academician Hao Yue said that although oxide semiconductors are still far from industrial application, we have seen their prospects. Compared with gallium nitride and silicon carbide, oxide semiconductors have a wider forbidden band width, which can achieve lower loss. But oxide semiconductor also has weaknesses. If its heat dissipation problem are not solved, it is impossible to achieve industrialization.