【International Papers】Preparation and UV detection performance of Ti-doped Ga₂O₃/intrinsic-Ga₂O₃/p-Si PIN photodiodes

      Researchers from the Tianjin University of Technology and Shandong University have published a dissertation titled "Preparation and UV detection performance of Ti-doped Ga₂O₃/intrinsic-Ga₂O₃/p-Si PIN photodiodes" in the scientific journal Springer Link.

Abstract

      In this work, PIN-structured photodiodes were fabricated by sputtering intrinsic-Ga₂O₃ and n-Ga₂O₃ with various Ti doping concentrations sequentially on p-Si substrates using dual-target RF magnetron co-sputtering technology. The prepared Ga₂O₃ films were all amorphous, and the surface RMS roughness increased with the increase of Ti doping concentration. The PIN diodes with Ti concentrations of 4.35 and 6.15 at.% exhibited high reverse breakdown voltages (180 and 160 V, respectively) and significant photoelectric response to 254 nm UV light (70 μW cm⁻²) in the reverse bias state, and the photo-dark current ratio (I_photo/I_dark) at − 100 V bias was 520.9 and 290.3, respectively. The 4.35 at.% Ti-doped photodiode had the highest responsivity up to 0.65 A mW⁻¹ at − 10 V bias, and the rise (t_r) and decay (t_d) times were as short as 0.31 s and 0.19 s, respectively. This study provides an easy method for the preparation of high-performance deep UV photodetectors and facilitates their post-integration and low-cost mass production.

Paper Link：https://doi.org/10.1007/s10854-023-10214-2