【Specialist Intro】Li Yuan —— the Member of Technical Expert Committee

Profile

Li Yuan, Dr., Master’s Supervisor, co-cultured by Beijing University of Technology and SPEC Lab/Electrical Engineering of the University of Texas at Austin, USA, is the candidate of the Shaanxi Provincial Thousand Talents Plan，and member of a national level Innovation Center Council of Irradiation Resistance Application Technology(ICREED 2023 TPC Member). In 2021, she joined the team of Academician Hao Yue of Xidian University, and is mainly engaged in the research of thermoelectric characteristics, dynamic working condition characteristics and reliability of (super) wide band gap semiconductor power devices. She once worked in the 772 Institute of China Aerospace Science and Technology, and accumulated rich engineering experience in the research of space integrated circuits and devices. In the past five years, as the first author, she has published 6 academic papers on (super) wide band band semiconductor power devices, including some top journal articles such as IEEE Journal of IEEE Transactions on Power Electronics，IEEE Journal of Emerging and Selected Topics in Power Electronic，IEEE Transactions on Electron Devices, and some top conference papers such as International Symposium on Power Semiconductor Devices and Ics（ISPSD）. In recent five years, she has presided over National Natural Science Foundation of China, 2 youth projects of the Shanxi Provincial Thousand Talents Plan and participated in 3 key projects as core personnel.

Team photo

Achievements

According to the latest report by China Economic Times, at the 2023 China Optical Valley Jiufeng Mountain Forum and Compound Semiconductor Industry Conference, Academician Hao Yue said that although oxide semiconductor is still far from industrial application, we have seen its prospects. Compared with gallium nitride and silicon carbide, oxide semiconductors have a wider band width, which can achieve lower loss. But its weaknesses also exists. If its heat dissipation problem is solved, it is impossible to achieve industrialization. The details and factual basis of the thermal characteristics during the process are the important prerequisite for the construction of the self-consistent thermoelectric coupling model of (super) wide band gap (ultrawide bandgap, UWBG) semiconductor power devices, the stable / transient thermoelectric numerical simulation study and the thermoelectric collaborative optimization design. At present, the characterization method of thermoelectric characteristics under stable and transient working conditions of gallium oxide power devices is far from perfect. We have preliminarily realized the characterization of gallium oxide power devices in steady state conditions; the characterization of gallium oxide diodes in transient conditions; and the collaborative design of gallium oxide groove diode devices (ISPSD 2023). We will continue to focus on the key issues of gallium oxide power devices and high temperature and high reliability applications.