【International Papers】High-performance fully transparent Ga₂O₃ solar-blind UV photodetector with the embedded indium–tin–oxide electrodes

      High-permeable UV photodetectors have great potential in integrated transparent electron applications. Recently, Shen De Zhen and Liu Ke Wei, researchers from Chinese Academy of Sciences Institute of Optical Precision Machinery and Physics, Changchun, and their research team put forward a new preparation strategy, that is, the β-Ga₂O₃ films were grown directly and selectively on a sapphire substrate using pre-prepared ITO interdigital electrodes, to prepare blind ultraviolet light detector with fully transparent metal-semiconductor-metal (MSM) structure. The photodetector exhibits excellent characteristics such as ultra-low dark current, high normalized photocurrent to dark current ratio (NPDR), high responsiveness, excellent suppression ratio and high specific detection rate. The embedding of the electrode structure and the high crystal quality β-Ga₂O₃ film make the photoelectric detection capability of the device better than the previously reported transparent UV photoelectric detector based on the Ga₂O₃ film. This work provides a new method for preparing a high-performance Ga₂O₃ solar-blind UV photodetector. The related results was published on Materials Today Physics, titled “High-performance fully transparent Ga₂O₃ solar-blind UV photodetector with the embedded indium–tin–oxide electrodes”.

Abstract

      High permeable UV photodetectors have received increasing attention for their great potential in integrated transparent electrons. In this essay, the researchers propose a new preparation strategy, that is, Ga₂O₃ film is grown epitaxial selectively on a c-plate sapphire substrate, using a preprepared indium tin oxide (ITO) electrode. The all-transparent metal-semiconductor-metal (MSM) solar-blind ultraviolet photoelectric detector was successfully designed and constructed in this way. The detector has an embedded indium tin oxide (ITO) electrode based on β-Ga₂O₃ film. The device has an ultra-low dark current at a 10 V voltage（1.6 pA）,ultra-high UV-visible inhibition ratio（1.3 × 10⁶）,high ratio detection rate（7.4 × 10¹⁵ Jones）and high responsiveness（74.9 A /W）.The results show that the MSM solar-blind UV detector with embedded indium tin oxide electrode is superior to the Ga₂O₃ film-based transparent UV detector reported in its study. The strong and uniform electric field and high quality β-Ga₂O₃ film embedded between two ITO-electrodes are the main reasons for the excellent solar-blind ultraviolet light detection performance of the detector. This study starts a new approach to realize the preparation of high-performance fully transparent Ga₂O₃ solar blind UV photodetector, which has great potential in future transparent electronics.

Paper Link：DOI:10.1016/j.mtphys.2023.101034