【Member News】The fourth-generation Semiconductor Gallium Oxide Material Project of Tongji University was Signed and Landed

      On June 20, Wuxi High-tech Zone of Jiangsu Province (hereinafter referred to as "High-tech Zone") held the signing ceremony of "Tongji University Fourth Generation Semiconductor Gallium Oxide Material Project", which means that the project was officially landed in the high-tech zone.

      Xu Jun, tenured professor of Tongji University, director of Shanghai Sapphire Single Crystal Engineering Technology Research Center, Director of Technical Committee of Shanghai Physical Vapour Deposition (PVD) Ultra-hard Coating and Equipment Engineering Technology Research Center, and Cui Rongguo, Secretary of Party Working Committee of High-tech Zone and Secretary of Xinwu District Party Committee witnessed the signing.

      Cui Rongguo pointed out that the IC industry in the high-tech zone started early, and is in the leading position in the country with a large scale. At present, the high-tech zone is striving to build a pilot zone for the development of Chinese silicon light industry, which has gathered a number of high-quality enterprises, core talents and high-end carriers. Gallium oxide is an important material to enhance the market competitiveness of the integrated circuit industry and realize the leapfrog technological progress of the industry. It is gradually becoming a rising star in the semiconductor materials industry, with great potential for market development. The implementation of the fourth generation semiconductor gallium oxide material project of Tongji University will certainly help the high-tech zone become the gathering place of photoelectric industry talents, technology innovation and the source of emerging industries, and contribute to strengthening the landmark industry of the high-tech zone, and promote the high-tech zone to seize the opportunity in the new strategic competition of the global semiconductor industry.

      Xu Jun said that the photoelectric industry in the high-tech zone has a good foundation with huge development space and broad industrial prospects. It is expected that through this cooperation, both sides can jointly build a national hard science and technology incubator to cultivate and introduce the world's first-class photoelectric industry talents. The fourth generation of semiconductor gallium oxide material industry is expected to continuously be promoted in the high-tech zone, building a semiconductor industry ecosystem with distinctive advantages and radiating to the whole country.

      Tongji University is an important IP in the field of artificial crystal and devices in China, which gave birth to a series of "firsts" in the development history of artificial crystal and device technology.  Based on Tongji university technical achievements in the field of crystal, continuous innovation and influence, joining hands with Linton Machine, the world's leading semiconductor single crystal growth and processing equipment manufacturing enterprise, and Qingdao Hua Xin, a semiconductor substrate processing enterprise, the national Tongji University innovation technology team set up Tongji university fourth generation semiconductor gallium oxide materials project in Wuxi high-tech zone.

      The project focuses on the implementation of "gallium oxide crystal manufacturing, equipment and process technology", "sapphire crystal manufacturing, equipment and process technology" and "magnetic and optical crystal manufacturing, equipment and process technology" and other research and development and industrialization of bottleneck projects. The project also focuses on building public service platforms for artificial crystal growth, precision optical processing and testing equipment and technology. Academician workstation will be set up and inaugurated as Research Institute of Artificial Crystal, Tongji University.