【World Express】The Institute of Production Technology of the University of Tokyo has developed a nano-thin film oxide semiconductor transistor using the atomic layer stacking method

      In a study recently published for the VLSI Symposium 2023, researchers from Institute of Industrial Science, The University of Tokyo have reported a deposition process for nanosheet oxide semiconductor. The oxide semiconductor resulting from this process has high carrier mobility and reliability in transistors.

      3D integrated circuits are made up of multiple layers that each play a role in the overall function. Oxide semiconductors are attracting a lot of attention as materials for various circuit components because they can be processed at low temperature, while still having high carrier mobility and low charge leakage, and are able to withstand high voltages.

      However, developing the processes needed to reliably deposit very thin layers of oxide semiconductor materials in the manufacture of devices is challenging and has not been fully established to date. Recently, the researchers have reported an atomic layer deposition (ALD) technique that produces layers appropriate for large-scale integration.

      "Using our process, we carried out a systematic study of field effect transistors (FETs) to establish their limitations and optimize their properties," explains lead author of the study, Kaito Hikake. FETs control the current flow in a semiconductor. "We tuned the ratio of the components and adjusted the preparation conditions and our findings led to the development of a multi-gate nanosheet FET for normally-off operation and high reliability."

      The findings revealed that a FET made from the chosen oxide semiconductor by ALD had the best performance. The multi-gate nanosheet FET is believed to be the first to combine high carrier mobility and reliability characteristics with normally-off operation.

Original link：https://www.iis.u-tokyo.ac.jp/en/news/4233/