【International Papers】Taking Ga₂O₃ to the Next Level

      Recently, an article titled 'Taking Ga₂O₃ to the next level' was published in the magazine 'Compound Semiconductor'.

      Now is the time to build on all this progress and deliver further improvement to the quality of β-Ga₂O₃ epitaxial films, as progress on this front will open the door to practical power electronic devices that fully exploit the potential of this oxide. That’s the key message at the heart of this feature, which summarises the latest MOCVD process optimisation that has ensured high-quality materials and ultimately high-performance devices. It is clear that when β-Ga₂O₃ is grown by MOCVD using optimal process conditions, the resulting material is of unrivalled quality.

Figure 1. 2D thickness map of a Ga₂O₃ thin film grown on a 50 mm sapphire substrate using the Agnitron Agilis 100 MOCVD reactor. A 2 mm edge exclusion is applied to the map. Film thickness is very uniform, with a non-uniformity of only about 2 percent.

Figure 2. Capacitance-voltage measurements determine the doping concentration dependence of the silane molar flow rate, for the growth of β-Ga₂O₃ films at Agnitron Technology using optimal process conditions (a). 2D atomic force microscopy (AFM) images of 5.1 µm thick layers grown on (010) β-Ga2O3 substrates with miscut angles of 1º (b) and 0º, also known as on-axis (c). The features on the film grown on the on-axis substrate are bigger than those for the film on the substrate with miscut angle of 1º.

Figure 3. The channel structure used for uniformly and intentionally silicon-doped films for the doping range of 10¹⁷–10²⁰ cm⁻³, grown using Agnitron’s Agilis 100 (a). Room-temperature Hall mobility of the channel stacks as a function of Hall carrier density, benchmarked with various state-of-the-art reports (b). Effectiveness of the growth steps is confirmed by Cornell University, using the same Agilis 100 reactor. Details of the data in (b) can be found in reference [5].