【Domestic News】Research Progress of Gallium Oxide-Based Schottky Barrier Diodes

      Abstract: Ga₂O₃ is a new wide bandgap semiconductor material with a bandgap width of about 4.8eV，a critical breakdown electric field of up to 8 MV/cm in treory, and a Baliga’s figure of merit of over 3000, so it has great potential in fabricating power devices. Ga₂O₃ is a preferred material for fabricating high performance semiconductor devices after SiC and GaN, and has attracted a lot of attention in recent years. The basic physical properties of Ga₂O₃ material are introduced, and the advantages and existing problems of Ga₂O₃-based SBDs are reviewed especially from the perspectives of device process, structure and edge terminal technology, and the further development trend of Ga₂O₃-based SBDs prospected.

DOI: 10．13290 /j．cnki．bdtjs．2022．12．002