【International Papers】Influence of White Light on the Photoelectric Characteristics of UV Detectors Based On β-Ga₂O₃

      Researchers from National Research Tomsk State University have published a dissertation titled " Influence of White Light on the Photoelectric Characteristics of UV Detectors Based On β-Ga₂O₃" in IEEE Sensors Journal.

Abstract

      In this report, we consider the effect of radiation with a radiation energy below the β-Ga2O3 band-gap on the photoelectric characteristics of ultraviolet (UV) radiation detectors based on gallium oxide thin films. The gallium oxide film was deposited by the radio frequency magnetron sputtering. Interdigital Ti/V electrodes were formed with an inter electrode distance d = 30 μm. The structures exhibit high value of photocurrent under irradiation with wavelength of λ = 254 nm and intensity of 780 μW/cm2. The detectors exhibit persistent photoconductivity after exposure to UV radiation. The presence of persistent conductivity is explained by the high concentration of traps in the Ga2O3 film and their recharging under UV irradiation. Radiation with an energy quantum below the the β-Ga2O3 band-gap changes the charge state of trap centers in a gallium oxide film. This effect leads to an increase in photocurrent under UV exposure and increases the stability of detectors.

Paper Link：https://doi.org/10.1109/JSEN.2023.3284412