【Member News】New Progress in the Research Team of Northeast Normal University——Tin-doping induced solution treatment Ga₂O₃ high performance light sensor for neuromorphic visual system

      Recently, Professor Xu Haiyang, Associate Professor Ma Jiangang and Lin Ya's research team from Northeast Normal University reported a liquid phase method to prepare Ga₂O₃ with tin foil as the doping source, and also prepared a high-performance Ga₂O₃: Sn based light sensor. Here, we optimize the tin doping concentration and annealing temperature to adjust the Ga₂O₃: Sn photosensor photoresponse to show ultra-high responsiveness and extremely long response decay time. In addition, in the low light environment of 0.5 μW·cm^-2 , pattern recognition accuracy of Neuromorphic visual system (NVSs) of Ga₂O₃:Sn photon synaptic array is up to 97.3%, which has great application potential in the field of neural network computing. The related result is published on Advanced Functional Materials, titled :“Tin doping induced high-performance solution-processed Ga₂O₃ photosensor toward neuromorphic visual system”.

Abstract

      As a new type of wide-band semiconductor material, Ga₂O₃ has become an important part of the neuromorphic visual system (NVSs) due to its high deep UV absorption, adjustable continuous photoconductivity and excellent electric field stability. High responsiveness and long decay time are important factors for achieving efficient NVSs. In this paper, we report a liquid phase method to prepare Ga₂O₃ with tin foil as the doping source. By adjusting the defect-related hole trapping process of tin doping and oxygen vacancy, we then constructed a tin-mixed Ga₂O₃ (Ga₂O₃: Sn) light sensor with ultra-high responsiveness and extremely long decay time. The high-performance Ga₂O₃: Sn light sensor can simulate the photon synaptic behavior while preprocessing the image. The pattern recognition accuracy of NVSs based on the photon synaptic array is up to 97.3% under the weakest reported pulse light signal (0.5 μW·cm^-2) stimulation. This study provides a low-cost solution method for the preparation of ultra-high sensitive Ga₂O₃: Sn NVSs, which lays the foundation for the development of artificial intelligence technology.

Article Information：

Li, X. Y. Shan, Y. Lin, et al. Tin doping induced high-performance solution-processed Ga₂O₃photosensor toward neuromorphic visual system. Adv. Funct. Mater., 2023, 2303584.

DOI:10.1002/adfm.202303584