【International Papers】Annealing Stability of NiO/Ga₂O₃ Vertical Heterojunction Rectifiers

      Researchers from the University of Florida published a dissertation titled "Annealing Stability of NiO/ Ga₂O₃ Vertical Heterojunction Rectifiers " in MDPI.

Abstract

      The stability of vertical geometry NiO/Ga₂O₃ rectifiers during two types of annealing were examined, namely (1) the annealing of NiO only, prior to the deposition of the Ni/Au metal anode stack, and (2) the annealing of the completed device. The devices were annealed in oxygen for 1 min at a temperature of up to 500 °C. The results show that annealing at 300 °C can lead to the best performance for both types of devices in terms of maximizing the breakdown voltage and on–off ratio, lowering the forward turn-on voltage, reducing the reverse leakage current, and maintaining the on resistance. The surface morphology remains smooth for 300 °C anneals, and the NiO exhibits a bandgap of 3.84 eV with an almost unity Ni₂O₃/NiO composition.

Figure 1. Device structure (left) and optical images after annealing at various temperatures (right).

Figure 2. Forward current densities and R_ON values for devices with (a) annealed NiO and (b) annealed NiO/contact metal as a function of temperature.

Papre Link：https://doi.org/10.3390/cryst13081174