【International Papers】XPS Depth Profile Study of Sprayed Ga₂O₃ Thin Films

      Researchers from the Department of Electrical & Electronic Engineering, Ahsanullah University of Science & Technology have published a dissertation titled " XPS Depth Profile Study of Sprayed Ga₂O₃ Thin Films " in Scientific Research.

Abstract

      Ga₂O₃ thin films were fabricated by spray pyrolysis method using gallium acetylacetonate as source material and water as oxidizer. The films were annealed at 450°C for 60 minutes in argon atmosphere. X-ray photoelectron spectroscopy (XPS) depth profile studies were carried out to analyze the stoichiometry and composition of sprayed as-deposited and annealed Ga₂O₃ thin films. Surface layers and the inner layers of as-deposited and annealed films were found nearly stoichiometric.

Figure 1. (a). XPS survey spectrum of as-deposited Ga₂O₃ film; (b). High resolution XPS spectra of the Ga 2p core level of as-deposited Ga₂O₃ film; (c). High resolution XPS spectra of the O 1s core level of as-deposited Ga₂O₃ film.

Paper Link：https://doi.org/10.4236/eng.2023.158035