【International Papers】Growth and characteristics of terbium doped Ga₂O₃ luminescent films

      Researchers from the Department of Electrical and Electronic Engineering, Synchrotron Light Application Center, Saga University have published a dissertation titled " Growth and characteristics of terbium doped Ga₂O₃ luminescent films" in Science Direct.

Abstract

      Terbium (Tb) doped Ga₂O₃ films were deposited on sapphire substrates by pulsed laser deposition (PLD) at substrate temperatures ranging from 100 to 500 ℃. Energy dispersive spectroscopy results show that Tb atoms are more readily incorporated into Ga₂O₃ at high temperatures. X-ray diffraction analysis indicates that (−201) oriented monoclinic Tb doped Ga₂O₃ films can be obtained at a substate temperature of 500 ℃. All films have high transmittance of over 80 % in the visible and infrared region. The peaks observed at 486, 540, 582, and 622 nm in the room temperature (RT) photoluminescence spectra for all samples are ascribed to the ⁵D₄–⁷F₆, ⁵D₄–⁷F₅, ⁵D₄–⁷F₄, and ⁵D₄–⁷F₃ transitions, respectively. No peak shift for all transitions in the PL spectra is found with temperature decreasing from RT to 60 K. The results suggest that Tb doped Ga₂O₃ films are promising for realizing the full color microscale light emitting diodes.

Paper Link：https://doi.org/10.1016/j.jcrysgro.2023.127361