【International Papers】Multi-Level Resistive Al/Ga₂O₃/ITO Switching Devices with Interlayers of Graphene Oxide for Neuromorphic Computing

      Researchers from the Department of Electrical Engineering, National Cheng-Kung University have published a dissertation titled " Level Resistive Al/Ga₂O₃/ITO Switching Devices with Interlayers of Graphene Oxide for Neuromorphic Computing " in MDPI.

Abstract

      Recently, resistive random access memory (RRAM) has been an outstanding candidate among various emerging nonvolatile memories for high-density storage and in-memory computing applications. However, traditional RRAM, which accommodates two states depending on applied voltage, cannot meet the high density requirement in the era of big data. Many research groups have demonstrated that RRAM possesses the potential for multi-level cells, which would overcome demands related to mass storage. Among numerous semiconductor materials, gallium oxide (a fourth-generation semiconductor material) is applied in the fields of optoelectronics, high-power resistive switching devices, and so on, due to its excellent transparent material properties and wide bandgap. In this study, we successfully demonstrate that Al/graphene oxide (GO)/Ga₂O₃/ITO RRAM has the potential to achieve two-bit storage. Compared to its single-layer counterpart, the bilayer structure has excellent electrical properties and stable reliability. The endurance characteristics could be enhanced above 100 switching cycles with an ON/OFF ratio of over 10³. Moreover, the filament models are also described in this thesis to clarify the transport mechanisms.

Figure 1. EDS mapping of the cross-section profile of the device.

Figure 2. (a) The XRD result of Ga₂O₃ thin film on a glass substrate. (b) The bandgap of Ga₂O₃ as measured by a spectrophotometer.

Paper Link：https://doi.org/10.3390/nano13121851