【International Papers】In-Situ Spectral Reflectance Investigation of Heteroepitaxial Grown β-Ga₂O₃ Thin Films on c-Plane Al₂O₃ Via MOVPE Process

      Researchers from the Leibniz-Institut für Kristallzüchtung have published a dissertation titled " In-Situ Spectral Reflectance Investigation of Heteroepitaxial Grown β-Ga₂O₃ Thin Films on c-Plane Al₂O₃ Via MOVPE Process " in SSRN.

Abstract

      Metalorganic vapor-phase epitaxy of β-Ga₂O₃/c-plane Al₂O₃ heterostructures was monitored in-situ by spectral reflectance in different wavelengths. The reflectance spectrum was analysed as a function of the growth time and the incident wavelength to estimate the growth rate and the refractive index at the growth temperatures. The obtained values are validated by ex-situ methods such as secondary ion mass spectrum measurement and spectroscopic ellipsometry. A theoretical simulation of the reflectance spectrum was carried out by combining a transfer matrix method with a multilayer model, and a good agreement with the experimental results is presented.

Figure 1. In-situ reflectance transients recorded during the film growth at different wavelengths of 405 nm, 633 nm, and 950 nm

Figure 2. AFM images of a β-Ga₂O₃ thin film grown on c-plane Al₂O₃ with a thickness of around 150 nm

Paper Link：https://papers.ssrn.com/sol3/papers.cfm?abstract_id=4536091