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【International Papers】Gate leakage modeling in lateral β-Ga₂O₃ MOSFETs with Al₂O₃ gate dielectric
日期：2023-11-10阅读：164
Researchers from the Department of Information Engineering, University of Padova have published a dissertation titled "Gate leakage modeling in lateral β-Ga2O3 MOSFETs with Al2O3 gate dielectric " in Applied Physics Letters.
Abstract
We present a detailed model of the static and dynamic gate leakage current in lateral β-Ga2O3 MOSFETs with an Al2O3 gate insulator, covering a wide temperature range. We demonstrate that (i) in the DC regime, current originates from Poole–Frenkel conduction (PFC) in forward bias at high-temperature, while (ii) at low temperature the conduction is dominated by Fowler–Nordheim tunneling. Furthermore, (iii) we modeled the gate current transient during a constant gate stress as effect of electron trapping in deep levels located in the oxide that inhibits the PF conduction mechanism. This hypothesis was supported by a TCAD model that accurately reproduces the experimental results.
FIG. 1. (a) Schematic cross section of the devices. (b) IG–VG characteristics of the devices under test detected from 120 to 350 K show a strong dependence on temperature. (c) Gate current–temperature characteristics extrapolated from (b). Solid lines are fitting of the experimental data according to the adopted models [Eq. (1)]. (d) Gate current transients recorded during a constant voltage experiment at different temperatures and (e) at different bias levels. The current transient is composed of a stretched exponential as presented in Eq. (3).
FIG. 2. Fitting of the data in Fig. 1 with the proposed conduction models. (a) Average reverse current exponentially depends on temperature with activation energy of 24 meV; (b) low-temperature low-forward bias is dominated by Fowler–Nordheim tunneling. (c) Activation energy in high-temperature forward bias is strongly dependent on the electric field, compatible with P–F effect. (d) Notation of activation energies according to the discussed model.
Paper Link：https://doi.org/10.1063/5.0154878
