【Expert Interview】Beijing GAO SEMI Professor Tang Weihua: To achieve the industrialization of Gallium Oxide, We must adhere to: Breaking through the blockade, Tirelessly, Practical!

      In 2023, the Asian Gallium Oxide Alliance (hereinafter referred to as"AGOA") expanded a new channel, —— Expert Interviews. It is provided by the governing units, member units and expert committee within the Alliance to explain their different opinions on the field of gallium oxide, leading us to know, understand, and explore the world of gallium oxide.

      This time, we have the honor to interview Professor Tang Weihua of Beijing GAO SEMI Co., Ltd., one of the governing units of the Alliance, to share his unique views on gallium oxide as a material.

Company profile

      Beijing GAO SEMI Co., Ltd. is a high-tech enterprise specializing in the research and development of Gallium Oxide materials, related devices and their applications. R&D and production of high quality single crystal substrate and epitaxial wafer, single crystal and epitaxial equipment, highly sensitive single crystal UV detector, high pressure high temperature high frequency high power electronic devices and other Gallium Oxide series high-tech products. The company has core technologies of Gallium Oxide single crystal substrate, epitaxy, devices, and special equipment. It has originality, leadership and influence in the fourth-generation semiconductor field, and is a leading enterprise in the fourth-generation semiconductor industry in China. It is a high-tech enterprise in Zhongguancun.

      The company's technology is derived from the scientific research achievements of the founder team in the field of Gallium Oxide for more than ten years, and has been supported by more than ten scientific research funds such as the National Natural Science Foundation, the National Key Research and Development Program, the National Defense Pre-research Special Fund of the Ministry of Education, and the key research and development special project of Beijing and Guangzhou. GAO SEMI has more than 20 domestic invention patents, master the Gallium Oxide single crystal growth and crystal processing, thin film epitaxy and device design and preparation of many technical know-how, with independent Gallium Oxide single crystal growth equipment design and manufacturing capabilities, cooperation in the development of Gallium Oxide peripheral equipment. Take the initiative to develop and actively layout the industrial chain of Gallium Oxide equipment-material-devices, and realize the independent control of China's Gallium Oxide industry.

      At present, the company has the technical capability of 2-4 inch single crystal substrate and epitaxy. In October 2023, at the fourth Cross-Strait Gallium Oxide and Related Materials and Devices seminar, the GAO SEMI officially released "the first domestic 4-inch Gallium Oxide single crystal substrate technical parameters", and announced that it has a full range of "Multi-specification Gallium Oxide single crystal products; Multi-specification Gallium Oxide epitaxy products; Multi-specification Gallium Oxide special equipment; Customized sample and technical service "ability.

Guest Introduction

      Prof. Tang Weihua is the founder, chairman and chief scientist of Beijing GAO SEMI Co., LTD. He is currently a professor/doctoral supervisor of Nanjing University of Posts and Telecommunications, and used to be a professor/doctoral supervisor of Beijing University of Posts and Telecommunications, and a researcher/doctoral supervisor of Institute of Physics, Chinese Academy of Sciences. He has been engaged in cooperative research in the University of Hong Kong, the Laboratory of Rare Earth Metallurgy Spectroscopy of the National Research Center of France, the National Institute of Technology and Standards in the United States, Tulane University in the United States and other overseas institutions. He is an expert in the evaluation of science and technology and talent projects such as the National Natural Science Foundation of China and the National Major Research Program of the Ministry of Science and Technology, invited review of more than ten kinds of domestic and international academic journals, member of the Crystal Society of China, member of the X-ray Diffraction professional committee of the Chinese Physical Society and member of the Solid defect professional Committee, member of the Standardization Committee of Zhongguancun Tianhe Semiconductor Technology Innovation Alliance, and Zhongguancun Tianhe Wide Supervisor of Band-gap Semiconductor Technology Innovation Alliance, the first group of specially invited experts of Zhongguancun Standard think tank.

      In 2011, we began to focus on the research of Gallium Oxide materials, physical properties and devices of ultra-wide band gap semiconductors. We are the leader in scientific research and industrialization practice of Gallium Oxide in China. He has presided over more than 20 national and provincial and ministerial scientific research projects related to Gallium Oxide, with a total fund of more than 50 million yuan. He has more than 30 invention patents related to Gallium Oxide crystals, epitaxy and optoelectronic devices, published more than 350 SCI papers and more than 15,000 citations, H-factor 61, published Gallium Oxide related SCI papers and citations ranked first in the world, and was rated as a highly cited paper scholar by ELSEVIER for many years. He was selected in the 2023 Global list of the world's top materials scientists, the top 2% of the world's top scientists, and the 1960-2023 list of lifetime scientific influence. It won the first prize of Beijing Science and Technology Award and the second Prize of Beijing Natural Science Award, which is the first provincial and ministerial science and technology award related to Gallium Oxide research in China. Enjoy the special government allowance of The State Council, has been selected in the national "New Century hundred million talents Project", Chinese Academy of Sciences "Hundred talents", Jiangsu Province "Double talent", Beijing University of Posts and Telecommunications "the first postal talent", Guangzhou Huangpu District Guangzhou Development Zone elite talent (innovation), Nanjing Zijinshan Merits-Jiangbei Plan high-level innovation and entrepreneurship talent (entrepreneurship), etc.

AGOA：Please introduce the company's current development plan in the field of Gallium Oxide

      Beijing GAO SEMI Co., LTD., as the pioneer and leader of the domestic Gallium Oxide industry, will focus on the construction of the Gallium Oxide industrial ecosystem in accordance with the development law of the semiconductor industry, break through the key technologies of the independent and controllable industrialization of Gallium Oxide around the relevant aspects of Gallium Oxide industry equipment, materials, devices and other aspects, and at the same time, mark the international Gallium Oxide advanced enterprises to break through the "bottleneck" problem. Accelerate the development of Gallium Oxide industry in China.

      Firstly, the Gallium Oxide substrate and epitaxy are currently the bottleneck of the development of the Gallium Oxide semiconductor industry, and are the most important carriers for the preparation of optoelectronic, radio frequency and power devices. GAO SEMI first focus on the breakthrough of large-size Gallium Oxide substrate technology, 2023 has achieved 2 inch Gallium Oxide substrate mass production, began to supply to the downstream market, 4 inch Gallium Oxide single crystal substrate yield is also continuing to improve, 2024 will achieve 4 inch Gallium Oxide single crystal substrate mass production, while carrying out research and development of more than 6 inches of Gallium Oxide single crystal substrate. The 6-inch Gallium Oxide substrate is expected to be released in early 2025. In terms of epitaxy, 2-inch and 4-inch Gallium Oxide homogeneous epitaxy will be launched in 2024.

      Secondly, Gallium Oxide related equipment will eventually become the key to the development of the Gallium Oxide semiconductor industry, ensuring the high yield of high-quality materials and high-performance devices. GAO SEMI based on a large number of process parameters, through numerical simulation and repeated iteration, have formed optimized temperature field flow field design, growth parameter automation, growth process visualization of crystal growth equipment design and construction capabilities, currently can provide 2-4 inch crystal growth furnace, and provide growth verification. In terms of epitaxy equipment, it has also been transformed by existing MOCVD equipment and cooperated to develop the integration of a variety of growth technologies, which can provide customized Gallium Oxide special epitaxy equipment and provide epitaxy process verification.

      In addition, the realization of Gallium Oxide optoelectronics, radio frequency and power devices is the core embodiment of the Gallium Oxide semiconductor industry, promoting the Gallium Oxide industry to extend downstream. GAO SEMI is at the forefront of optoelectronic devices, while cooperating with universities and research institutions to carry out basic research on Gallium Oxide devices, and strategic cooperation with downstream device industry parties to jointly promote the industrialization of Gallium Oxide devices. At present, the basic research of devices is far ahead of the industrialization research and development of devices. The device structure design, preparation process, test and characterization have attracted the interest of a large number of researchers and produced a large number of academic papers. At the same time, the prototype devices in the laboratory have further verified the performance advantages of Gallium Oxide as an optoelectronic, radio frequency and power device. At the same time, the intrinsic defect of Gallium Oxide materials such as low thermal conductivity of Gallium Oxide materials and difficult P-type doping can be effectively solved through substrate composite, heterogeneous integration, structure optimization and innovative packaging technology, and further enhance the confidence in the industrial application of Gallium Oxide devices, and the sunrise of the Gallium Oxide industry is getting closer.

      Finally, the large-scale integrated application of Gallium Oxide devices is the embodiment of the explosion of Gallium Oxide semiconductor industry, and the dawn is at hand. At present, GAO SEMI is actively cooperating with downstream enterprises to jointly promote the application demonstration of Gallium Oxide devices in the industry.

AGOA：Company team introduction

      As a leader in the research of Gallium Oxide materials and devices for the fourth generation of ultra-wide band gap semiconductors in China, Professor Tang Weihua has devoted himself to research for more than ten years, becoming the forerunner and main promoter of the industrialization process of Gallium Oxide in China, and the founder and chairman of Beijing GAO SEMI Co., LTD. Beijing GAO SEMI Co., Ltd. was established with the strong support of Professor Ding Hong, academician of Chinese Academy of Sciences, and Professor Chen Xiaolong, pioneer of Chinese Silicon Carbide Wafer. They have been the scientific and technical consultants of GAO SEMI since its establishment. The five core team members have more than 10 years of experience in semiconductor industry, high educational level, strong team cohesion, and firm entrepreneurial will. GAO SEMI currently has 16 members, the team is determined to "four generations of innovation, GAO SEMI the first", adhering to the belief of " Breaking through the blockade, Independence, Strive hard and forge ahead, Tirelessly, Practical, Walk in the forefront ", in the key links of technological breakthrough, product development, capacity expansion, talent introduction, application layout and other planning and layout. To speed up the upgrading of large-size Gallium Oxide substrates and epitaxy localization, and make due contributions to the independent controllable and comprehensive development of China's fourth-generation semiconductor material industry chain.

      GAO SEMI teams continue to tackle key problems, independent research and development, master core intellectual property rights, research and development of large-size Gallium Oxide single-crystal growth equipment, master Gallium Oxide MOCVD high-quality epitaxy technology, breakthrough in the ultra-wide band gap Gallium Oxide high-quality heteroepitaxy/homoepitaxy and doping control technology, and develop the key indicators of the world's leading day blind detector. Beijing GAO SEMI Co., Ltd. is the domestic leader in Gallium Oxide single-crystal substrate, epitaxy film and photoelectric devices, and the single-crystal substrate is equal to the international best level. At the same time, it also has the independent design and development of Gallium Oxide growth key equipment, and fully realizes the independent mastery of core technology, has won many science and technology awards, and has become the first echelon of the international Gallium Oxide industry.

AGOA：Please introduce the main products of the company

(1) Independently developed and produced Gallium Oxide crystal furnace, MOCVD epitaxial equipment transformation;

(2) Various specifications of Gallium Oxide substrates, including 2 inch, 4 inch and customized products.

(3) Gallium Oxide crystal processing services;

(4) Gallium Oxide homogeneous and heteroepitaxy;

AGOA：How to view the role of university-enterprise cooperation and industry-university-research combination in the development of Gallium Oxide industrialization?

      First, Beijing GAO SEMI Co., Ltd. itself is a scientific innovation enterprise of "school-enterprise collaboration, production and research cooperation". It was founded by Professor Tang Weihua based on his team's solid basic research results of Gallium Oxide for many years and in line with the national grand strategy and the new pattern of international competition. School-enterprise joint venture has the following characteristics and advantages in the establishment of science and technology innovation enterprises:

(1) Technological innovation: Through joint research and development, technology and production practice can be combined to innovate and develop more competitive products in the market. The foundation of technological innovation based on deep scientific research is stronger, and only deep roots can flourish. Basic research determines the height that technology can reach, and technological innovation determines the breadth of technology application.

(2) Resource sharing: Schools and enterprises can share resources, including talents, equipment, technology and so on. Academic institutions have high-level talents, wide disciplinary background, complete instruments and equipment, and more professional technologies, which can help reduce R&D costs and improve R&D efficiency.

(3) Personnel training: School-enterprise cooperation can provide practical and employment opportunities for students, and at the same time train more industrial talents with practical skills and application ability, and train and reserve a large number of continuous industrial technical talents for enterprises.

(4) Brand effect: School-enterprise cooperation can enhance the technical image of the enterprise and improve the brand value.

      Second, In the development of Gallium Oxide semiconductor industrialization, school-enterprise cooperation and the combination of industry-university-research have the following effects:

(1) Technological breakthrough: Through the combination of production, university and research, superior resources can be concentrated to carry out technological research, break the foreign technological blockade, and promote the localization process of semiconductor technology.

(2) Industrial upgrading: school-enterprise cooperation can promote the development of the semiconductor industry and promote industrial upgrading and transformation. Through technology transfer and personnel training, the competitiveness of the entire industry can be improved.

(3) Innovation-driven: The combination of production, university and research can promote scientific and technological innovation and achievement transformation, and provide a steady stream of innovation power for the Gallium Oxide industry.

(4) Talent cultivation: Through school-enterprise cooperation, more high-quality talents can be cultivated for the semiconductor industry to meet the needs of talents for industrial development.

      Third, to sum up, university-enterprise cooperation and the combination of industry-university-research have played a very important role in the establishment of science and innovation enterprises and the development of Gallium Oxide semiconductor industrialization. In this way, it can promote technological innovation, personnel training and industrial upgrading, improve the competitiveness of its own enterprises and the healthy development of the entire industrial chain.

AGOA：What are the preconditions for the industrialization of Gallium Oxide？

(1) With industrialization technology: Gallium Oxide is a fourth-generation new ultra-wide band gap semiconductor material, and its preparation technology needs continuous innovation, maturity and improvement to ensure the quality, yield and stability of the material. Controllable quality, production and yield are the key to industrialization.

(2) Master independent technology: Gallium Oxide as a strategic semiconductor material tightly blocked by developed countries such as the United States and Japan, we must be independent and self-reliant, rely on our own excellent innovation ability to break through the blockade, control the necessary invention patents, so that no one can be invincible.

(3) Comply with market demand: the series of Gallium Oxide products need to be gradually recognized and accepted by the market, which requires advance overall planning and effective planning layout, scientific guidance and steady development. Firstly, select the breakthrough point that is easy to be accepted by the market, and gradually establish the layout of Gallium Oxide.

(4) Improve the industrial ecology: The industrialization of Gallium Oxide needs to establish and improve the entire industrial chain and ecosystem, including the cooperation and support of substrates, epitaxy, devices and applications.

(5) To build a talent team: talent is the first productive force of scientific and technological innovation, therefore, to build a high-quality, hard style, strong ability of the talent team is the first condition for success.

(6) Stable financial support: The industrialization of Gallium Oxide requires a large amount of capital investment, including research and development, production, marketing and other links.

(7) Government policy guidance: The government can provide policy support and guidance to promote the industrialization process of Gallium Oxide.

      In short, these preconditions are complementary and need to be coordinated and cooperated in the entire industry in order to achieve the steady development of Gallium Oxide industrialization.

AGOA：What kind of technical talents related to Gallium Oxide do you need？

      GAO SEMI focuses on the industrialization of Gallium Oxide, which needs integrated R & D talents with multidisciplinary backgrounds in physics, electronics, materials, machinery, etc., mainly focusing on crystal growth, processing, epitaxial growth, device design and other related talents.

AGOA：Future direction of Gallium Oxide industrialization of your company

      On the whole, GAO SEMI will continue to increase the development of large-size Gallium Oxide single-crystal substrates and epitaxy materials in the future to form mass production technology to provide high quality Gallium Oxide single-crystal substrates and epitaxy wafers, which is the core business of GAO SEMI, while providing customized crystal and epitaxy equipment as well as heterogeneous/homogeneous epitaxy and doping control technology services. Secondly, the design and research of photoelectric, RF and power devices are carried out, and the demonstration application of Gallium Oxide devices is developed.

      We are fully aware that Gallium Oxide substrate and epitaxy have always been the bottleneck of the development of ultra-wide band gap semiconductor industry, and is the most important carrier for the preparation of optoelectronic and power devices. Previously, Gallium Oxide crystal growth technology has been monopolized by Japan's NCT company, and in 2022, the United States and Japan jointly embargoed Gallium Oxide substrate in China. Once the industrialization breakthrough of GAO SEMI large-size Gallium Oxide substrate solves the problem of "jam neck" in the development of ultra-wide bandgap semiconductor and will rapidly promote the development of Gallium Oxide power devices in China.

      We firmly believe that compared with the third-generation semiconductor materials Silicon Carbide, Gallium Oxide devices have higher withstand voltage, smaller size, lower cost and wider applications, and have great potential in the power device market. In the future, they will shine and occupy an important position in the wide-band gap semiconductor. According to Japan's Fujifilm economic forecast, the global Gallium Oxide material market will reach 4.5 billion yuan in 2025, and will reach 10 billion yuan in 2030, and its upstream and downstream industry chain will form an industrial cluster of 100 billion scale.

      GAO SEMI are willing to work together with domestic colleagues in the whole field of cooperation, for the development of China's Gallium Oxide industry hand in hand to move steadily and achieve comprehensive corner overtaking.

      Gallium Oxide is the most promising fourth-generation ultra-wide band gap semiconductor, with clear application fields, obvious advantages and unlimited potential. But at the same time, we should also be soberly aware that the industrialization of Gallium Oxide still has a long way to go, and needs the joint efforts of domestic and international colleagues. GAO SEMI team will be determined to "four generations of innovation, GAO SEMI the first", adhering to the belief of " Breaking through the blockade, Independence, Strive hard and forge ahead, Tirelessly, Practical, Walk in the forefront ", brave to be the industry pioneer and break into a new world.

AGOA：Comments or suggestions on the alliance work

      AGOA Asia Gallium Oxide Alliance is a good platform for Gallium Oxide academic and industrial exchange, and its establishment is very timely and plays a very obvious role. It is hoped that more activities can be organized in the future, strive for updated resources, attract wider attention, and jointly create a prosperous and beautiful vision.