【Specialist Intro】Zhang Hui —— the Member of Technical Expert Committee

Personal Profile

Zhang Hui

Professor of Zhejiang University, School of Materials Science and Engineering, Hangzhou International Science and Innovation Center. At present, he is mainly engaged in the research of Gallium Oxide single crystal growth, wafer processing and defect control. Developed a new melt method Gallium Oxide single crystal growth technology with independent intellectual property rights, casting method, and successfully obtained high quality 4-inch Gallium Oxide single crystal, the substrate of Gallium Oxide density, surface roughness and swing curve half height and width have reached the international advanced level. Overcome the technical bottleneck of CZ method, solve the problem of the interface between floater and concave, and successfully obtain 2 inch Gallium Oxide single crystal; Two types of corrosion pits caused by stress and dislocation in chemical corrosion of Gallium Oxide were found. The density of corrosion pits was significantly reduced and the crystal quality was improved by atmospheric heat treatment. He has published more than 190 SCI papers in Nat. Comm., Adv. Mater. and other international famous journals. And has been cited by SCI more than 10,000 times, with H-factor of 62; More than 20 national invention patents have been authorized. He won the first prize of Science and Technology of Zhejiang Province (ranked third) and the second prize of National Natural Science (ranked second). He was selected into the national Ten thousand "Young Top Talents" program and supported by the National Natural Science Foundation of China Outstanding Youth Fund. As the founder, he established Hangzhou GAREN SEMI Co., Ltd. to carry out the industrialization of Gallium Oxide single crystal materials. At present, he has built a 2-inch casting mass production line and realized the small-batch mass production of 4-inch half-insulation and N-type substrate.

Expert's Message

Gallium Oxide single crystal has become the star material of ultra-wide bandgap semiconductors due to its advantages in performance and growth methods. The Gallium Oxide devices developed in China have reached the international leading level, but the high-quality Gallium Oxide substrate is still dependent on imports. We will be based on solving the major national needs, adhere to independent innovation, will continue to deeply in the research and development of Gallium Oxide substrate, and strive to provide material support for the development of China's power electronics and other industries.