【Specialist Intro】Liang Hongwei —— the Member of Technical Expert Committee

Personal Profile

Liang Hongwei, Male, PhD Supervisor, Professor, Dean of School of Integrated Circuits, Dalian University of Technology. Currently, he is a member of the Nuclear Electronics and Nuclear Detection Technology Branch of the Chinese Institute of Electronics and a member of the Young Scientist Club, a special expert of the Expert Committee of the Talent Reserve Base of the Integrated Circuit Branch of the China Semiconductor Industry Association, a member of the Expert committee of the National College Students Integrated Circuit Innovation and Entrepreneurship Competition, and a member of the Talent Development Committee of the third generation semiconductor The integration of Industry and education Development Forum and Alliance. National Key Research and development plan strategic advanced electronic materials key special project Consulting expert group expert, Dalian high-end talent, Dalian Semiconductor Industry Association Vice president, Dalian wide band gap semiconductor device integration and system Key laboratory director, Jiangsu Province "Double talent" special expert, Jilin and Liaoning Province science and technology award review experts, Dalian science and technology entrepreneurship mentor. In 2005, he received his Ph. D. degree from the Key Laboratory of Excited State Physics, Changchun Institute of Optics Fine Mechanics and Physics, Chinese Academy of Sciences. His research interests include third-generation semiconductor biosensors, light-emitting devices (ultraviolet, blue, green and yellow LED), power electronic devices (HEMT devices), and high temperature and radiation resistant detectors (particle detectors and X-ray detectors). The developed wide band gap semiconductor radiation detector has been applied to the white beam line of spallation neutron source in China, and the experimental area has been established to support the nuclear data acquisition work of many units. It has won the first prize of Science and Technology Progress of Jilin Province, the second prize of Natural Science of Liaoning Province and the third prize of Science and Technology Progress of Dalian City. Presided over the National Natural Science Foundation, the national key research and development plan and 863 major project sub-projects, provincial and municipal and enterprise commissioned more than 30 projects, published more than 150 papers, authorized more than 10 invention patents, including 2 American invention patents.

In terms of Gallium Oxide research, the research team is one of the first teams to carry out the epitaxy growth of Gallium Oxide MOCVD in China, mainly carrying out the epitaxy growth, doping and development of UV detector of Gallium Oxide materials, and realizing the UV detector with the switching ratio >10⁸ @254/365nm rejection ratio >10⁷, laying the foundation for single photon detection. It has obtained 1 invention patent in the United States and more than 10 patents in China.

Achievements Display

The research of Gallium Oxide MOCVD growth and high-quality Gallium Oxide thick film epitaxy technology and devices with low background carrier concentration are mainly carried out.

Expert's Message

The unique performance advantages of Gallium Oxide are bound to shine in the future.