【Member News】The National Key Research and Development Plan Project "Research on Large-Size Gallium Oxide Semiconductor Materials and High-Performance Devices" 2023 annual summary meeting was successfully held

      On December 24, the 2023 annual summary meeting of the National Key Research and Development Plan "New Display and Strategic Electronic Materials" key special project "Research on Large-Size Gallium Oxide Semiconductor Materials and High-Performance Devices" was successfully held in the Science and Art Center of Xiamen University. Prof. Shen Bo from Peking University, Prof. Sheng Kuang from Zhejiang University, Prof. Tao Xutang from Shandong University, Prof. Long Shibing from University of Science and Technology of China, Prof. Wang Xinhua from Institute of Microelectronics, Chinese Academy of Sciences, Prof. Ye Jiandong from Nanjing University, and Prof. Liu Wen from Xijiaotong-Liverpool University in Suzhou attended the meeting. Prof. Shen Bo and Prof. Sheng Kuang are responsible experts of the project. The project was supported by Zhang Long, deputy director of Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, project leader Qi Hongji and related researchers more than 30 people attended the meeting.

      Zhang Long delivered a welcome speech on behalf of the project undertaking unit. He expressed his heartfelt thanks to all the experts who came from all over the country to participate in this meeting during their busy schedule, and introduced the background and basic situation of the project. He pointed out that the project has made certain progress in the past year, and looked forward to more valuable suggestions from all the experts to the project team to carry out more extensive exchanges and cooperation. And on the spot for the consulting experts to issue a letter of appointment.

      Qi Hongji reported the overall progress of the project in 2023, and the leaders of each sub-project reported the work progress respectively. Over the past year, the project team has proposed a new doping mechanism theory, achieved nearly 6 inches of Gallium Oxide crystal blank growth and high-quality doping controlled film preparation, and completed the development and performance verification of diodes, transistors, RF devices and Solar-blind UV detection and other devices. The expert group has entered into an in-depth technical discussion on the content of the report.

      The participating experts put forward valuable suggestions from the aspects of technology itself, future application scenarios, domestic and international competitive position, and positive interaction and cooperation between domestic teams.

      Shen Bo summed up his speech, he stressed the important positioning of the project during the 14th Five-Year Plan period, and proposed that the future should focus on material research and strengthen the research of basic technical principles; At the same time, he emphasized the innovation and achievement of key technical links, should carefully sort out the core problems currently facing, pay attention to user application evaluation, and put forward high standards for the future expected results of the project.

      The project is led by Shanghai Institute of Optics and Fine Mechanics of Chinese Academy of Sciences, and collaborates with Xiamen University, Jilin University, 55th Research Institute of China Electronic Science and Technology Group Corporation, Sinoma Synthetic Crystals Co., Ltd., Fudan University, University of Electronic Science and Technology of China, Hangzhou Institute of Optics and Fine Mechanics, Hangzhou Fujia Gallium Industry Technology Co., LTD. The project is aimed at the urgent need for the development of Gallium Oxide based Solar-blind ultraviolet detection and power electronic devices. Based on solving the key scientific issues of Gallium Oxide single crystal substrate and epitaxial thin film defect and doping mechanism, the structure-activity relationship between microscopic electronic structure, film physical properties and device properties, the project has broken through key technologies such as 6-inch single crystal thermal field design, high-quality epitaxial film growth, device core structure design, developed a new generation of high-performance Gallium Oxide base power device and detector.